JAJSVY2 December   2024 LM74680

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output Voltage
      2. 7.3.2 Charge Pump
      3. 7.3.3 Gate Drivers
      4. 7.3.4 Enable
    4. 7.4 Device Functional Modes
      1. 7.4.1 Conduction Mode
        1. 7.4.1.1 Regulated Conduction Mode
        2. 7.4.1.2 Full Conduction Mode
      2. 7.4.2 Reverse Current Protection Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Design Considerations
        2. 8.2.2.2 MOSFET Selection
        3. 8.2.2.3 Output Capacitance
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Transient Protection
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 ドキュメントの更新通知を受け取る方法
    2. 9.2 サポート・リソース
    3. 9.3 Trademarks
    4. 9.4 静電気放電に関する注意事項
    5. 9.5 用語集
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.4.1.2 Full Conduction Mode

For the LM74680 to operate its top gates TG1 and TG2 in full conduction mode the gate driver must be enabled as described in Section 7.3.3 and the current from source to drain of the external MOSFET must be large enough to result in an INx to OUTP voltage drop of greater than VTG_FC. If these conditions are achieved the GATE pin is internally connected to the charge pump resulting in the INx to OUTP voltage being equal to VTGx – VINx. By connecting the internal charge pump to GATE the external MOSFET RDS(ON) is minimized reducing the power loss of the external MOSFET when forward currents are large.