SLUA963B June   2020  – October 2022 UCC21710-Q1 , UCC21732-Q1 , UCC5870-Q1

 

  1.   HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers
  2. 1Introduction
  3. 2HEV/EV Overview
    1. 2.1 HEV/EV Architectures
    2. 2.2 HEV/EV Traction Inverter System Architecture
    3. 2.3 HEV/EV Traction Inverter System Performance Impact
  4. 3Design of HEV/EV Traction Inverter Drive Stage
    1. 3.1  Introduction to UCC217xx-Q1
    2. 3.2  Designing a Traction Inverter Drive System Using UCC217xx-Q1
    3. 3.3  Description of Protection Features
    4. 3.4  Protection Features of UCC217xx-Q1
    5. 3.5  UCC217xx-Q1 Protection and Monitoring Features Descriptions
      1. 3.5.1 Primary and Secondary Side UVLO and OVLO
      2. 3.5.2 Over-Current (OC) and Desaturation (DESAT) Detection
      3. 3.5.3 2-Level and Soft Turn-Off
      4. 3.5.4 Power Switch Gate Voltage (VGE/VGS) Monitoring
      5. 3.5.5 Power Switch Anti-Shoot-Through
      6. 3.5.6 Integrated Internal or External Miller Clamp
      7. 3.5.7 Isolated Analog-to-PWM Channel
      8. 3.5.8 Short-Circuit Clamping
      9. 3.5.9 Active Pulldown
    6. 3.6  Introduction to UCC5870-Q1
    7. 3.7  Designing a Traction Inverter Drive System Using UCC5870-Q1
    8. 3.8  Description of Protection Features
    9. 3.9  Protection Features of UCC5870-Q1
    10. 3.10 UCC5870-Q1 Protection and Monitoring Features Descriptions
      1. 3.10.1  Primary and Secondary Side UVLO and OVLO
      2. 3.10.2  Programmable Desaturation (DESAT) Detection and Over-Current (OC)
      3. 3.10.3  Adjustable 2-Level or Soft Turn-Off
      4. 3.10.4  Active High-Voltage Clamp
      5. 3.10.5  Power Switch Gate Voltage (VGE/VGS) Monitoring
      6. 3.10.6  Gate Threshold Voltage Monitor
      7. 3.10.7  Power Switch Anti-Shoot-Through
      8. 3.10.8  Active Short Circuit (ASC)
      9. 3.10.9  Integrated Internal or External Miller Clamp
      10. 3.10.10 Isolated Analog-to-Digital Converter
        1. 3.10.10.1 Temperature Monitoring of Power Transistor
      11. 3.10.11 Short-Circuit Clamping
      12. 3.10.12 Active and Passive Pulldown
      13. 3.10.13 Thermal Shutdown and Temperature Warning of Driver IC
      14. 3.10.14 Clock Monitor and CRC
      15. 3.10.15 SPI and Register Data Protection
  5. 4Isolated Bias Supply Architecture
  6. 5Summary
  7. 6References
  8. 7Revision History

Introduction to UCC217xx-Q1

The UCC21732-Q1 is a galvanic isolated single channel gate drivers designed for up to 1700V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness. UCC21732-Q1 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC217xx-Q1 family of devices include the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers' versatility and simplifying the system design effort, size and cost. The benefits of these circuits are given below, along with auxiliary circuitry to enhance system-level reliability.