SLUP412 February   2022 LMG3522R030-Q1


  1. Introduction
  2. Comparing Different Technologies
  3. Advantages of Integrating the Driver With GaN FETs
  4. The GaN-Based 6.6-kW OBC Reference Design
  5. PFC Stage
  6. DC/DC Stage
  7. DC/DC Topology Selection
  8. Frequency Selection
  9. Core Loss
  10. 10Loss of ZVS
  11. 11Dead Time
  12. 12ISR Bandwidth
  13. 13Overall
  14. 14Resonant Tank Design
  15. 15Thermal Solution
  16. 16Layout Best Practices
  17. 17Control-Loop Considerations
  18. 18Conclusions
  19. 19References
  20. 20Important Notice


  1. Texas Instruments: Designing a High-Power Bidirectional AC/DC Power Supply Using SiC FETs.
  2. Texas Instruments. Sept. 8, 2021. GaN-Based, 6.6-kW, Bidirectional, Onboard Charger Reference Design. TI reference design No. PMP22650. Accessed Sept. 19, 2021.
  3. Texas Instruments. n.d. Bidirectional CLLLC Resonant Dual Active Bridge (DAB) Reference Design for HEV/EV Onboard Charger. TI reference design No. TIDM-02002. Accessed Sept. 19, 2021.
  4. Texas Instruments. n.d. 98.6% Efficiency 6.6-kW Totem-Pole PFC Reference Design for HEV/EV Onboard Charger. TI reference design No. TIDA-01604. Accessed Sept. 19, 2021.
  5. Texas Instruments: Optimizing GaN Performance with an Integrated Driver.
  6. Texas Instruments: Direct-Drive Configuration for GaN Devices.
  7. Texas Instruments: LMG352xR030-Q1 650-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting.
  8. Texas Instruments: Power Factor Correction (PFC) Circuit Basics.
  9. Electromagnetic compatibility of multimedia equipment – Emission requirements.” Comité International Spécial des Perturbations Radioélectriques (CISPR) 32: 2015. CISPR: Geneva, Switzerland, October 2019.
  10. Texas Instruments: GaN FET-Based CCM Totem-Pole Bridgeless PFC.
  11. Texas Instruments: Analytic Expressions for Currents in the CCM PFC Stage.