SLVAF66 June   2021 DRV3255-Q1 , DRV8300 , DRV8301 , DRV8302 , DRV8303 , DRV8304 , DRV8305 , DRV8305-Q1 , DRV8306 , DRV8307 , DRV8308 , DRV8320 , DRV8320R , DRV8323 , DRV8323R , DRV8340-Q1 , DRV8343-Q1 , DRV8350 , DRV8350F , DRV8350R , DRV8353 , DRV8353F , DRV8353R

 

  1. 1 Introduction to High-Power Motor Applications
    1. 1.1 Effects of a Poorly-Designed High-Power Motor Driver System
    2. 1.2 Example of the High-Power Design Process
  2. 2 Examining a High-Power Motor Drive System at a High Level
    1. 2.1 Anatomy of the Motor Drive Power Stage and How to Troubleshoot
    2. 2.2 Troubleshooting a High-Power System
  3. 3 High-Power Design Through MOSFETs and MOSFET Gate Current (IDRIVE)
    1. 3.1 MOSFET Gate Current
      1. 3.1.1 How Gate Current Causes Damage
      2. 3.1.2 Gate Resistors and Smart Gate Drive Technology
        1. 3.1.2.1 Gate Resistors
        2. 3.1.2.2 Smart Gate Drive and Internally-Controlled Sink and Source Gate Currents
        3. 3.1.2.3 Summary for Gate Resistors and Smart Gate Drive Technology
      3. 3.1.3 Example Gate Current Calculation for a Given FET
  4. 4 High-Power Design Through External Components
    1. 4.1 Bulk and Decoupling Capacitors
      1. 4.1.1 Note on Capacitor Voltage Ratings
    2. 4.2 RC Snubber Circuits
    3. 4.3 High-Side Drain to Low-Side Source Capacitor
    4. 4.4 Gate-to-GND Diodes
  5. 5 High-Power Design Through a Parallel MOSFET Power Stage
  6. 6 High-Power Design Through Protection
    1. 6.1 VDS and VGS Monitoring
      1. 6.1.1 Turning Off the FETs During an Overcurrent, Shoot-Through, or FET Shorting Event
    2. 6.2 Passive Gate-to-Source Pulldown Resistors
    3. 6.3 Power Supply Reverse Polarity or Power Supply Cutoff Protection
  7. 7 High-Power Design Through Motor Control Methods
    1. 7.1 Brake versus Coast
      1. 7.1.1 Algorithm-Based Solutions
      2. 7.1.2 External Circuit Solutions
      3. 7.1.3 Summary of Brake versus Coast
  8. 8 High-Power Design Through Layout
    1. 8.1 What is a Kelvin Connection?
    2. 8.2 General Layout Advice
  9. 9 Conclusion
  10. 10Acknowledgments

3.1.2.3 Summary for Gate Resistors and Smart Gate Drive Technology

  • Both the gate resistor and the Smart Gate Drive technology adjust the gate sink and source current
  • Choose a gate resistor that is equal to the reactance of the source inductance for critically damped performance and choose a gate resistor that is up to twice the reactance of the source inductance for underdamped performance as described in the External Gate Resistor Design Guide for Gate Drivers tech note
  • Alternatively, the resistors can also be chosen by using general calculations, observing the VGS waveform, and adjusting the value higher or lower for slower or faster slew rates, respectively
  • The Smart Gate Drive source or sink current can be calculated for a given FET, as described in Section 3.1.3
  • The process for choosing the gate resistor or IDRIVE is iterative and experimental
  • If the source and sink current can be controlled within the device, for example, Smart Gate Drive, it is still a good practice to add a 0-Ω resistor in series with the gate of the FET and replace with a non-zero resistor if further adjustment is required