SNOAA68 June   2021 LMG3410R050 , LMG3410R070 , LMG3410R150 , LMG3411R050 , LMG3411R070 , LMG3411R150 , LMG3422R030 , LMG3422R050 , LMG3425R030 , LMG3425R050 , LMG3522R030-Q1 , LMG3526R030

 

  1.   Trademarks
  2. 1 Introduction
  3. 2 Background
  4. 3 Addressing GaN Failure Mechanisms
  5. 4 Achieving Lifetime Reliability
  6. 5 Achieving Lifetime Switching
  7. 6 Achieving Reliable Design
  8. 7 Achieving Surge Robustness
  9. 8 System-Level Reliability and Protection
  10. 9 Automotive
  11. 10Conclusion
  12. 11References

10 Conclusion

Texas Instruments has longstanding expertise with the qualification of semiconductor products, which is brought to bear on qualifying GaN. We have additionally developed new methodologies and supported standardization efforts of the GaN industry. Our approach builds upon well-established silicon standards to consider GaN product operation under both normal and extreme conditions.

TI GaN products have been engineered for lifetime reliability by addressing the failure mechanisms and test considerations of GaN. TI GaN is robust to Time-Dependent Breakdown (TDB), with a FIT rate less than one, is robust to hot-electron wearout from hard-switching with MTTF over a billion years for typical operation, has stable dynamic RDS(ON) with aging, and operates reliably in power-supply systems. In addition, TI GaN hard-switches through lightning surge events and has many system-level protection features such as overcurrent and temperature protection, and undervoltage lockout protection.

To learn more about TI’s GaN solutions, see www.ti.com/GaN.