TIDUEZ3A April   2021  – June 2022

 

  1.   Description
  2.   Resources
  3.   Features
  4.   Applications
  5.   5
  6. 1System Description
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 LMG342xR030
      2. 2.3.2 TMS320F28002x
      3. 2.3.3 OPA607
      4. 2.3.4 UCC21222
  8. 3Hardware, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
      1. 3.3.1 Test Procedures
      2. 3.3.2 Performance Data: Efficiency, iTHD, and Power Factor
      3. 3.3.3 Functional Waveforms
        1. 3.3.3.1 Current Sensing and Protection
        2. 3.3.3.2 Power Stage Startup and Input Waveforms
        3. 3.3.3.3 AC Drop Test
        4. 3.3.3.4 Surge Test
        5. 3.3.3.5 EMI Test
      4. 3.3.4 Thermal Test
      5. 3.3.5 GaN FET Switching Waveform
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 Support Resources
    4. 4.4 Trademarks
  10. 5About the Author
  11. 6Revision History

LMG342xR030

The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.