SLPS407C September   2013  – March 2017 CSD19531KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • KCS|3
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Hot Swap Telecom
  • Motor Control

3 Description

This 100-V, 6.4-mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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CSD19531KCS FET_Pins.gif
CSD19531KCS TO220p2.png

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 37 nC
Qgd Gate Charge Gate-to-Drain 7.5 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 7.3 mΩ
VGS = 10 V 6.4
VGS(th) Threshold Voltage 2.7 V

Device Information(1)

DEVICE PACKAGE MEDIA QTY SHIP
CSD19531KCS TO-220 Plastic Package Tube 50 Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 100 A
Continuous Drain Current (Silicon Limited), TC = 25°C 110
Continuous Drain Current (Silicon Limited), TC = 100°C 78
IDM Pulsed Drain Current(1) 285 A
PD Power Dissipation 214 W
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 60 A, L = 0.1 mH, RG = 25 Ω		 180 mJ
  1. Max RθJC = 0.7º C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD19531KCS graph07_SLPS407.png

Gate Charge

CSD19531KCS graph04F2_SLPS407.png