SBAU358A November   2020  – June 2025 AFE10004

 

  1.   1
  2.   Description
  3.   Get Started
  4.   Features
  5.   Applications
  6.   6
  7. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specification
    4. 1.4 Device Information
  8. 2Hardware
    1. 2.1 Power Requirements
      1. 2.1.1 Configuring the EVM for a Positive Output Range
      2. 2.1.2 Configuring the EVM for a Negative Output Range
    2. 2.2 Header Information
    3. 2.3 Jumper Information
    4. 2.4 Interfaces
      1. 2.4.1 SPI Configuration
      2. 2.4.2 I2C Configuration
    5. 2.5 Test Points
  9. 3Software
    1. 3.1 Software Installation
    2. 3.2 Software Description
      1. 3.2.1 Launching the Software
      2. 3.2.2 Low Level Configuration Page
      3. 3.2.3 Block Diagram Page
      4. 3.2.4 Look Up Table Page
        1. 3.2.4.1 Loading and Saving LUT Files
  10. 4Hardware Design Files
    1. 4.1 Schematics
    2. 4.2 PCB Layouts
    3. 4.3 Bill of Materials (BOM)
  11. 5Additional Information
    1. 5.1 Electrostatic Discharge Caution
    2. 5.2 Trademarks
  12. 6Related Documentation
  13. 7Revision History

Device Information

The AFE10004 is a highly integrated, autonomous, PA precision AFE that includes four temperature compensation DACs, integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM, allowing any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.

The AFE10004 has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.

The function integration and wide operating temperature range make the AFE10004 an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.