SBOA601 January   2025 LOG200

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Critical Photodiode Specifications
  6. 3Interfacing the LOG200 With the Photosensor
    1. 3.1 Photodiode Connections
    2. 3.2 Photodiode Adaptive Biasing Current Output
  7. 4Optical Bench for Current Sensing Measurements
    1. 4.1 Transient Response with Photosensor
  8. 5Optical Power Measurements with the LOG200
  9. 6Error Sources and Uncalibrated Error Analysis
  10. 7Auxiliary Op Amp Circuits
    1. 7.1 Single-Ended to Differential Conversion Circuit
    2. 7.2 Sallen-Key Low-Pass Filter
  11. 8Summary
  12. 9References

Critical Photodiode Specifications

Photodiodes are one of the most common detectors for measuring a light source's optical power. A photodiode can be operated in one of two modes: photoconductive (reverse bias) or photovoltaic (zero bias). The photodiode bias condition depends upon the application's speed requirements and the amount of tolerable dark current (Idark) on the sensor. Dark current is the current in the photodiode when there is no incident light and can be a large source of error during low photodiode current measurements.

In photoconductive mode, an external reverse bias is applied, and the measured output current is linearly proportional to the input optical power. Applying a reverse bias increases the width of the depletion junction, producing an increased responsivity and a decrease in junction capacitance, which creates a very linear response. However, operating in a reverse bias condition tends to increase the dark current. Figure 2-1 shows the dark current when the photodiode is reverse biased.

 Photodiode Dark Current in
                    Photoconductive Mode Figure 2-1 Photodiode Dark Current in Photoconductive Mode

This example shows a near-infrared (NIR) wavelength Indium Gallium Arsenide (InGaAs) photodiode for the design. In this application example, the photodiode operates in the photoconductive mode, where exposure to light causes a reverse current through the detector. A reverse bias is applied to the photosensor to reduce the junction capacitance. The reverse bias voltage (VR) increases the depletion region width and consequently decreases the junction capacitance; therefore, increasing VR improves the speed of response and linearity of the photodiode, with a trade-off of larger dark current.

Table 2-1 shows the NIR G8195-12 photodiode parameters.

Table 2-1 NIR (InGaAs) Photodiode Sensor Specifications
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Max Reverse Voltage VR TA = 25°C 20 V
Spectral Response Range ƛ TA = 25°C 0.9 to 1.7 µm
Photodiode Respositivity R(ƛ) TA = 25°C

ƛ = 1.3 µm

0.75 0.9 A/W
Junction Capacitance CJ TA = 25°C
VR = 5V

f = 1 MHz

1.0 1.5 pF
Dark Current Idark TA = 25°C
VR = 5V
0.02 0.4 nA