SBOSAD6B April   2023  – August 2024 TLV9361-Q1 , TLV9362-Q1 , TLV9364-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information for Single Channel
    5. 5.5 Thermal Information for Dual Channel
    6. 5.6 Thermal Information for Quad Channel
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 EMI Rejection
      2. 6.3.2 Thermal Protection
      3. 6.3.3 Capacitive Load and Stability
      4. 6.3.4 Electrical Overstress
      5. 6.3.5 Overload Recovery
      6. 6.3.6 Typical Specifications and Distributions
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Low-Side Current Measurement
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
      4. 7.2.4 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 TINA-TI (Free Software Download)
        2. 8.1.1.2 TI Precision Designs
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information for Single Channel

THERMAL METRIC(1) TLV9361-Q1 UNIT
DBV
(SOT-23)		 DCK
(SC70)
5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 189.3 202.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 86.8 111.6 °C/W
RθJB Junction-to-board thermal resistance 55.9 51.6 °C/W
ψJT Junction-to-top characterization parameter 23.6 25.8 °C/W
ψJB Junction-to-board characterization parameter 55.5 51.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.