SCES463J June   2003  – January 2026 SN74LVC1G3157-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics 125C
    7. 5.7 Analog Channel Specifications
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSVCCMINTYP(1)MAXUNIT
ronON-state switch resistance(2)See Figure 6-1
and Figure 5-1		VI = 0V,IO = 4mA1.65V1120Ω
VI = 1.65V,IO = –4mA1550
VI = 0V,IO = 8mA2.3V812
VI = 2.3V,IO = –8mA1130
VI = 0V,IO = 24mA3V79.5
VI = 3V,IO = –24mA920
VI = 0V,IO = 30mA4.5V67.5
VI = 2.4V,IO = –30mA712
VI = 4.5 ,IO = –30mA715
rrangeON-state switch resistance
over signal range(2)(3)		0 ≤ VBn ≤ VCC
(see Figure 6-1 and Figure 5-1)		IA = –4mA1.65V200Ω
IA = –8mA2.3V75
IA = –24mA3V25
IA = –30mA4.5V15
ΔronDifference in on-state resistance between switches(2)(4)(5)See Figure 6-1VBn = 1.15V,IA = –4mA1.65V0.5Ω
VBn = 1.6V,IA = –8mA2.3V0.1
VBn = 2.1V,IA = –24mA3V0.1
VBn = 3.15V,IA = –30mA4.5V0.1
ron(flat)ON-state resistance flatness(2)(4)(6)0 ≤ VBn ≤ VCCIA = –4mA1.65V110Ω
IA = –8mA2.3V26
IA = –24mA3V9
IA = –30mA4.5V4
Ioff(7)OFF-state switch leakage current0 ≤ VI, VO ≤ VCC (see Figure 6-2)1.65V
to 5.5V		±1μA
±0.05±1(1)
IS(on)ON-state switch leakage currentVI = VCC or GND, VO = Open (see Figure 6-3)5.5V±1μA
±0.1(1)
IINControl input current0 ≤ VIN ≤ VCC0V
to 5.5V		±1μA
±0.05±1(1)
ICCSupply currentVIN = VCC or GND5.5V110μA
ΔICCSupply-current changeVIN = VCC – 0.6V5.5V500μA
CinControl input capacitanceS5V2.7pF
Cio(off)Switch I/O capacitanceBn5V5.2pF
Cio(on)Switch I/O capacitanceBn5V17.3pF
A17.3
(1) TA = 25°C
(2) Measured by the voltage drop between I/O pins at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages on the two (A or B) ports.
(3) Specified by design
(4) Δron = ron(max) – ron(min) measured at identical VCC, temperature, and voltage levels
(5) This parameter is characterized, but not tested in production.
(6) Flatness is defined as the difference between the maximum and minimum values of ON-state resistance over the specified range of conditions.
(7) Ioff is the same as IS(off) (OFF-state switch leakage current).