Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
High-frequency power supplies often require high-speed, high-current drivers such as the UCC2742x-Q1 family. A leading application is the need to provide a high-power buffer stage between the PWM output of the control IC and the gates of the primary power MOSFET or IGBT switching devices. In other cases, the driver IC is used to drive the power device gates through a drive transformer. Synchronous rectification supplies also have the need to simultaneously drive multiple devices which can present an extremely large load to the control circuitry.
Driver ICs are used when it is not feasible to have the primary PWM regulator IC directly drive the switching devices for one or more reasons. The PWM IC may not have the brute drive capability required for the intended switching MOSFET, limiting the switching performance in the application. In other cases, there may be a desire to minimize the effect of high-frequency switching noise by placing the high current driver physically close to the load. Also, newer ICs that target the highest operating frequencies may not incorporate onboard gate drivers at all. Their PWM outputs are only intended to drive the high impedance input to a driver such as the UCC2742x-Q1. Finally, the control IC may be under thermal stress due to power dissipation, and an external driver can help by moving the heat from the controller to an external package.
To select proper device from UCC2742x-Q1 family, TI recommends first checking the appropriate logic for the outputs. The UCC27423-Q1 has dual inverting outputs, the UCC27424-Q1 has dual noninverting outputs, and the UCC27425-Q1 has an inverting channel A and noninverting channel B. Moreover, evaluate some considerations to make the most appropriate selection. Among these considerations are VDD, drive current, and power dissipation.
Large power MOSFETs present a large load to the control circuitry. Proper drive is required for efficient, reliable operation. The UCC2742x-Q1 drivers have been optimized to provide maximum drive to a power MOSFET during the Miller plateau region of the switching transition. This interval occurs while the drain voltage is swinging between the voltage levels dictated by the power topology, requiring the charging and discharging of the drain-gate capacitance with current supplied or removed by the driver device.
Two circuits are used to test the current capabilities of the UCC2742x-Q1 driver. In each case, external circuitry is added to clamp the output near 5 V while the IC is sinking or sourcing current. An input pulse of 250 ns is applied at a frequency of 1 kHz in the proper polarity for the respective test. In each test, there is a transient period where the current peaked up and then settled down to a steady-state value. The noted current measurements are made at a time of 200 ns after the input pulse is applied, after the initial transient.
The circuit in Figure 31 is used to verify the current sink capability when the output of the driver is clamped around 5 V, a typical value of gate-source voltage during the Miller plateau region. The UCC2742x-Q1 is found to sink 4.5 A at VDD = 15 V and 4.28 A at VDD = 12 V.
The circuit show in Figure 32 is used to test the current source capability with the output clamped around 5 V with a string of Zener diodes. The UCC2742x-Q1 is found to source 4.8 A at VDD = 15 V and 3.7 A at VDD = 12 V.
The UCC2742x-Q1 family of drivers are capable of delivering 4 A of current to a MOSFET gate for a period of several hundred nanoseconds. High-peak current is required to turn the device ON quickly. Then, to turn the device OFF, the driver is required to sink a similar amount of current to ground. This repeats at the operating frequency of the power device. A MOSFET is used in this discussion because it is the most common type of switching device used in high frequency power conversion equipment.
Reference 1 in the Related Documentation section discuss the current required to drive a power MOSFET and other capacitive-input switching devices. Reference 1 in includes information on the previous generation of bipolar IC gate drivers.
When a driver IC is tested with a discrete, capacitive load, it is a fairly simple matter to calculate the power that is required from the bias supply. The energy that must be transferred from the bias supply to charge the capacitor is given by Equation 2.
There is an equal amount of energy transferred to ground when the capacitor is discharged. This leads to a power loss given by Equation 3.
This power is dissipated in the resistive elements of the circuit. Thus, with no external resistor between the driver and gate, this power is dissipated inside the driver. Half of the total power is dissipated when the capacitor is charged, and the other half is dissipated when the capacitor is discharged. An actual example using the conditions of the previous gate drive waveform should help clarify this.
With VDD = 12 V, CLOAD = 10 nF, and f = 300 kHz, the power loss can be calculated as Equation 4.
With a 12-V supply, this would equate to a current of Equation 5.
The actual current measured from the supply was 0.037 A, and is very close to the predicted value. But, consider the IDD current that is due to the IC internal consumption. With no load, the IC current draw is 0.0027 A. Under this condition, the output rise and fall times are faster than with a load. This could lead to an almost insignificant, yet measurable current due to cross-conduction in the output stages of the driver. However, these small current differences are buried in the high-frequency switching spikes, and are beyond the measurement capabilities of a basic lab setup. The measured current with 10-nF load is reasonably close to that expected.
The switching load presented by a power MOSFET can be converted to an equivalent capacitance by examining the gate charge required to switch the device. This gate charge includes the effects of the input capacitance plus the added charge needed to swing the drain of the device between the ON and OFF states. Most manufacturers provide specifications that provide the typical and maximum gate charge, in nC, to switch the device under specified conditions. Using the gate charge Qg, one can determine the power that must be dissipated when charging a capacitor. This is done by using the equivalence Qg = CeffV to provide the power loss in Equation 6.
Equation 6 allows a power designer to calculate the bias power required to drive a specific MOSFET gate at a specific bias voltage.
Figure 33 and Figure 34 show rising and falling time and turnon and turnoff propagation delay testing waveform in room temperature for UCC27424-Q1, and waveform measurement data (see the bottom part of the waveform). Each channel, INA/INB/OUTA/OUTB, is labeled and displayed on the left hand of the waveforms.
The load capacitance testing condition is 1.8 nF, VDD = 12 V, and f = 300 kHz.
HI and LI share one same input from function generator; therefore, besides the propagation delay and rising or falling time, the difference of the propagation delay between HO and LO gives the propagation delay matching data.
Note the linear rise and fall edges of the switching waveforms. This is due to the constant output current characteristic of the driver as opposed to the resistive output impedance of traditional MOSFET-based gate drivers.