SLUAAH0 February   2022 UCC14130-Q1 , UCC14131-Q1 , UCC14140-Q1 , UCC14141-Q1 , UCC14240-Q1 , UCC14241-Q1 , UCC14340-Q1 , UCC14341-Q1 , UCC15240-Q1 , UCC15241-Q1

 

  1.   Trademarks
  2. 1 Introduction
    1. 1.1 Pin Configuration and Functions
  3. 2 Three-Phase Traction Inverter
  4. 3 Gate Drive Bias Requirements
    1. 3.1 Gate Drive Bias Architectures
    2. 3.2 IGBT vs. SiC
    3. 3.3 Determining Required Bias Supply Power
    4. 3.4 Input Voltage Requirements
    5. 3.5 Output Voltage Requirements
  5. 4 Single Positive Isolated Output Voltage
  6. 5 Dual Positive and Negative Output Voltages
  7. 6 Dual Positive Output Voltages
  8. 7 Capacitor Selection
  9. 8 RLIM Current Limit Resistor
    1. 8.1 RLIM Functional Description
    2. 8.2 RLIM Dual Output Configuration
      1. 8.2.1 CVEE Above Nominal Value CVDD Below Nominal Value
      2. 8.2.2 CVEE Below Nominal Value CVDD Above Nominal Value
      3. 8.2.3 Gate Driver Quiescent Current: IQ_VEE > IQ_VDD
      4. 8.2.4 Gate Driver Quiescent Current: IQ_VEE < IQ_VDD
      5. 8.2.5 CVEE Above Nominal Value CVDD Below Nominal Value: IQ_VEE > IQ_VDD
      6. 8.2.6 CVEE Below Nominal Value CVDD Above Nominal Value: IQ_VEE < IQ_VDD
    3. 8.3 RLIM Single Output Configuration
  10. 9 UCC14240-Q1 Excel Design Calculator Tool
  11. 10Thermal Considerations
    1. 10.1 Thermal Resistance
    2. 10.2 Junction-to-Top Thermal Characterization Parameter
    3. 10.3 Thermal Measurement and TJ Calculation Example
  12. 11Enable (ENA) and Power Good (/PG)
  13. 12PCB Layout Considerations
  14. 13Reference Design Example
  15. 14Summary
  16. 15References

14 Summary

Distributed gate drive bias architectures offer the highest level of performance, reliability and fault detection required by EV, HEV automotive propulsion and battery management systems. By integrating the transformer and control functions into a low-profile SOIC package, the UCC14240-Q1 1.5-W, 24-V VIN, High-Efficiency, > 3 kVRMS, Isolated DC-DC Module eases the challenge of providing dedicated bias power to each IGBT/SiC gate driver location. The UCC14240-Q1 provides isolated, positive and negative voltage rails and is easily configurable to meet the needs of different IGBT/SiC power and voltage requirements. Ease of use, low component count, high reliability, high power density, compatibility with TI Isolated Gate Drivers and scalability make UCC14240-Q1 the smart choice for EV, HEV HV bias supply applications.