SLUSCO1B June   2017  – July 2024 UCC27212

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Undervoltage Lockout (UVLO)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
      1. 9.2.1 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

4 Pin Configuration and Functions

UCC27212 DPR PackageSON-10Top View Figure 4-1 DPR PackageSON-10Top View
Table 4-1 Pin Functions
PIN I/O DESCRIPTION
NO. NAME
2 HB P High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is 0.022µF to 0.1µF.
7 HI I High-side input.(2)
3 HO O High-side output. Connect to the gate of the high-side power MOSFET.
4 HS P High-side source connection. Connect to source of high-side power MOSFET. Connect the negative side of bootstrap capacitor to this pin.
8 LI I Low-side input.(2)
10 LO O Low-side output. Connect to the gate of the low-side power MOSFET.
5 N/C — No internal connection.
6 N/C — No internal connection.
Pad PowerPAD ™(3) G Electrically referenced to VSS (GND). Connect to a large thermal mass trace or GND plane to dramatically improve thermal performance.
1 VDD P Positive supply to the lower-gate driver. Decouple this pin to VSS (GND). Typical decoupling capacitor range is 0.22µF to 4.7µF.(1)
9 VSS G Negative supply terminal for the device which is generally grounded.
(1) HI or LI input is assumed to connect to a low impedance source signal. The source output impedance is assumed less than 100Ω. If the source impedance is greater than 100Ω, add a bypassing capacitor, each, between HI and VSS and between LI and VSS. The added capacitor value depends on the noise levels presented on the pins, typically from 1nF to 10nF should be effective to eliminate the possible noise effect. When noise is present on two pins, HI or LI, the effect is to cause HO and LO malfunctions to have wrong logic outputs.
(2) For cold temperature applications TI recommends the upper capacitance range. Follow the Layout Guidelines for PCB layout.
(3) The thermal pad is not directly connected to any leads of the package; however, it is electrically and thermally connected to the substrate which is the ground of the device.