SLUSFN3A July   2024  – May 2025 BQ25820

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics (BQ25820)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Power-On-Reset
      2. 7.3.2 Device Power-Up From Battery Without Input Source
      3. 7.3.3 Device Power Up from Input Source
        1. 7.3.3.1 VAC Operating Window Programming (ACUV and ACOV)
        2. 7.3.3.2 MODE Pin Configuration
        3. 7.3.3.3 REGN Regulator (REGN LDO)
        4. 7.3.3.4 Switching Frequency and Synchronization (FSW_SYNC)
        5. 7.3.3.5 Device HIZ Mode
      4. 7.3.4 Battery Charging Management
        1. 7.3.4.1 Autonomous Charging Cycle
          1. 7.3.4.1.1 Charge Current Programming (ICHG pin and ICHG_REG)
        2. 7.3.4.2 Li-Ion Battery Charging Profile
        3. 7.3.4.3 LiFePO4 Battery Charging Profile
        4. 7.3.4.4 Charging Termination for Li-ion and LiFePO4
        5. 7.3.4.5 Charging Safety Timer
        6. 7.3.4.6 Thermistor Qualification
          1. 7.3.4.6.1 JEITA Guideline Compliance in Charge Mode
          2. 7.3.4.6.2 Cold/Hot Temperature Window in Reverse Mode
      5. 7.3.5 Power Path Management
        1. 7.3.5.1 Dynamic Power Management: Input Voltage and Input Current Regulation
          1. 7.3.5.1.1 Input Current Regulation
            1. 7.3.5.1.1.1 ILIM_HIZ Pin
          2. 7.3.5.1.2 Input Voltage Regulation
            1. 7.3.5.1.2.1 Max Power Point Tracking (MPPT) for Solar PV Panel
        2. 7.3.5.2 Ideal Diode BATFET Control
      6. 7.3.6 Reverse Mode Power Direction
      7. 7.3.7 Integrated 16-Bit ADC for Monitoring
      8. 7.3.8 Status Outputs (PG, STAT1, STAT2, and INT)
        1. 7.3.8.1 Power Good Indicator (PG)
        2. 7.3.8.2 Charging Status Indicator (STAT1, STAT2 Pins)
        3. 7.3.8.3 Interrupt to Host (INT)
      9. 7.3.9 Serial Interface
        1. 7.3.9.1 Data Validity
        2. 7.3.9.2 START and STOP Conditions
        3. 7.3.9.3 Byte Format
        4. 7.3.9.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 7.3.9.5 Target Address and Data Direction Bit
        6. 7.3.9.6 Single Write and Read
        7. 7.3.9.7 Multi-Write and Multi-Read
    4. 7.4 Device Functional Modes
      1. 7.4.1 Host Mode and Default Mode
      2. 7.4.2 Register Bit Reset
    5. 7.5 BQ25820 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Typical Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 ACUV / ACOV Input Voltage Operating Window Programming
          2. 8.2.1.2.2 Charge Voltage Selection
          3. 8.2.1.2.3 Switching Frequency Selection
          4. 8.2.1.2.4 Inductor Selection
          5. 8.2.1.2.5 Input (VAC / SYS) Capacitor
          6. 8.2.1.2.6 Output (VBAT) Capacitor
          7. 8.2.1.2.7 Sense Resistor (RAC_SNS and RBAT_SNS) and Current Programming
          8. 8.2.1.2.8 Power MOSFETs Selection
          9. 8.2.1.2.9 ACFETs and BATFETs Selection
        3. 8.2.1.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

VAC = ACP = ACN = SYS = SRP = SRN = 28V, TJ = -40°C to +125°C, and TJ = 25°C for typical values (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
QUIESCENT CURRENTS
ISD_BAT Shutdown battery current with BATFET off (ISRN + ISRP) VBAT = 28V, VAC = 0V, ADC_EN = 0, FORCE_BATFET_OFF = 1, TJ < 105 °C 10 µA
IQ_BAT Quiescent battery current with BATFET on (ISRN + ISRP) VBAT = 28V, VAC = 0V, ADC_EN = 0, TJ < 105 °C 17 µA
VBAT = 28V, VAC = 0V, ADC_EN = 1, TJ < 105 °C 500 700 µA
IHIZ_VAC HIZ input current (IVAC) EN_HIZ = 1 10 30 µA
IQ_VAC Quiescent input current (IVAC) Not switching 0.75 1 mA
IQ_REV Quiescent battery current in Reverse mode (ISRN + ISRP) Not switching 0.75 1 mA
VAC / BAT POWER UP
VVAC_OP VAC operating range 4.4 70 V
VVAC_OK VAC converter enable threshold VAC rising, no battery 4.4 V
VVAC_OKZ VAC converter disable threshold VAC falling, no battery 3.5 V
VREF_ACUV ACUV comparator threshold to enter VAC_UVP VACUV falling 1.095 1.1 1.106 V
VREF_ACUV_HYS ACUV comparator threshold hysteresis VACUV rising 50 mV
VVAC_INT_OV VAC internal threshold to enter VAC_OVP IN rising 72 74 76 V
VVAC_INT_OVZ VAC internal thresholds to exit VAC_OVP IN falling 69 71 73 V
VREF_ACOV ACOV comparator threshold to enter VAC_OVP VACOV rising 1.184 1.2 1.206 V
VREF_ACOV_HYS ACOV comparator threshold hysteresis VACOV falling 50 mV
VSRN_OK Battery voltage to enable BATFET VSRN rising, no input 3.1 V
VSRN_OKZ Battery voltage to disable BATFET - VSRN falling, no input 2.15 2.65 V
CHARGE VOLTAGE REGULATION
VVFB_RANGE Feedback voltage range 1.504 1.566 V
VVFB_NOM Nominal feedback voltage VFB_REG = 0x10 1.536 V
VVFB_ACC Feedback voltage regulation accuracy TJ = 0°C to 85°C –0.5 0.5 %
TJ = -40°C to 125°C –0.7 0.7 %
RFBG FBG resistance to PGND IFBG = 1mA 33 55 Ω
FAST CHARGECURRENT REGULATION
ICHG_REG_RANGE Charge current regulation range 0.4 20 A
ICHG_REG_ACC I2C setting charge current regulation accuracy RBAT_SNS = 5mΩ, VBAT = 12V, 36V, 55V. ICHG_REG = 0x012C 15 A
–3 3 %
RBAT_SNS = 5mΩ, VBAT = 12V, 36V, 55V. ICHG_REG = 0x0064 5 A
–3 3 %
RBAT_SNS = 5mΩ, VBAT = 12V, 36V, 55V. ICHG_REG = 0x0028 2 A
–5 5 %
KICHG Hardware charge current limit set factor (Amperes of charge current per kΩ on ICHG pin) RBAT_SNS = 5mΩ, RICHG = 10kΩ, 5kΩ, and 3.33kΩ 48 50 52 A x kΩ
VREF_ICHG ICHG pin voltage when ICHG pin is in regulation 2.0 V
PRE-CHARGE CURRENT REGULATION
IPRECHG_RANGE Precharge current regulation range VFB < VBAT_LOWV * VVFB_REG 0.25 10 A
IPRECHG_ACC I2C setting precharge current accuracy RBAT_SNS = 5mΩ, VFB < VBAT_LOWV * VVFB_REG. IPRECHG = 0x003C 3.0 A
–4 4 %
RBAT_SNS = 5mΩ, VFB < VBAT_LOWV * VVFB_REG. IPRECHG[1:0] = 0x0014 1.0 A
–10 10 %
RBAT_SNS = 5mΩ, VFB < VBAT_LOWV * VVFB_REG. IPRECHG[1:0] = 0x000A 0.50 A
–30 30 %
CHARGE TERMINATION
ITERM_RANGE Termination current range VFB = VVFB_REG 0.25 10 A
ITERM_ACC Termination current accuracy RBAT_SNS = 5mΩ, VBAT = 12V, 36V, 55V. ITERM = 0x001E 1.5 A
–7 7 %
RBAT_SNS = 5mΩ, VBAT = 12V, 36V, 55V. ITERM = 0x000A 0.50 A
–20 20 %
RBAT_SNS = 5mΩ, VBAT = 12V, 36V, 55V. ITERM = 0x0005 0.250 A
–50 50 %
BATTERY VOLTAGE COMPARATORS
VBAT_SHORT Trickle charge to pre-charge transition VSRN rising 2.8 3 3.2 V
Pre-charge to trickle charge transition VSRN falling 2.2 2.4 2.6 V
VBAT_LOWV Pre-charge to fast-charge transition VFB rising, as percentage of VFB_REG, VBAT_LOWV[2:0] = 3 69.0 71.7 73.8 %
VFB rising, as percentage of VFB_REG, VBAT_LOWV[2:0] = 2 64.3 66.7 69.0 %
VFB rising, as percentage of VFB_REG, VBAT_LOWV[2:0] = 1 52 55 58 %
VFB rising, as percentage of VFB_REG, VBAT_LOWV[2:0] = 0 27 30 33 %
VBAT_LOWV_HYS BAT_LOWV hysteresis 5 %
VRECHG Battery recharge threshold for Li-Ion and LiFePO4 VFB falling, as percentage of VFB_REG, VRECHG[1:0] = 3 97.6 %
VFB falling, as percentage of VFB_REG, VRECHG[1:0] = 2 95.2 %
VFB falling, as percentage of VFB_REG, VRECHG[1:0] = 1 94.3 %
VFB falling, as percentage of VFB_REG, VRECHG[1:0] = 0 93.0 %
INPUT CURRENT REGULATION
IIREG_DPM_ACC I2C setting input current regulation accuracy in forward mode RAC_SNS = 2mΩ, IAC_DPM = 0x00A0 20 A
–3 3 %
RAC_SNS = 2mΩ, IAC_DPM = 0x0050 10 A
–4 4 %
RAC_SNS = 2mΩ, IAC_DPM = 0x0028 5 A
–7 7 %
KILIM Hardware input current limit set factor (Amperes of input current per kΩ on ILIM_HIZ pin) RAC_SNS = 2mΩ, RILIM = 5kΩ, 2.5kΩ, and 1.67kΩ 48 50 52 A x kΩ
VREF_ILIM_HIZ ILIM_HIZ pin voltage when ILIM_HIZ pin is in regulation 2.0 V
VIH_ILIM_HIZ ILIM_HIZ input high threshold to enter HIZ mode VILIM_HIZ rising 3.7 V
INPUT VOLTAGE REGULATION
VVREG_DPM_RANGE Input voltage DPM regulation range 4.4 65 V
VVREG_DPM_ACC I2C setting input voltage regulation accuracy VAC_DPM = 0x076C 38 V
–2 2 %
VVREG_DPM_ACC I2C setting input voltage regulation accuracy in forward mode  VAC_DPM = 0x04E2 25 V
–2 2 %
VAC_DPM = 0x03B6 19 V
–2 2 %
VACUV_DPM ACUV pin voltage when in VDPM regulation 1.198 1.210 1.222 V
REVERSE MODE VOLTAGE REGULATION
VREV_RANGE SYS Voltage regulation range in Reverse mode 3.3 65 V
VREV_ACC Voltage regulation accuracy in Reverse mode VSYS_REV = 0x0960 48 V
–2 2 %
VSYS_REV = 0x0578 28 V
–2 2 %
VREV_ACC VAC Voltage regulation accuracy in Reverse mode VSYS_REV = 0x02EE 15 V
–2 2 %
VSYS_REV = 0x00FA 5 V
–2 2 %
REVERSE MODE CURRENT REGULATION
IIREV_ACC Input current regulation accuracy in Reverse mode RAC_SNS = 2mΩ, IAC_REV = 0x00A0 20 A
–3.5 3.5 %
RAC_SNS = 2mΩ, IAC_REV = 0x0028 5 A
–5.5 5.5 %
CHARGE MODE BATTERY-PACK NTC MONITOR
VT1_RISE TS pin voltage rising T1 threshold, charge suspended above this voltage. As Percentage to REGN, TS_T1=0°C w/ 103AT 72.75 73.25 73.85 %
VT1_FALL TS pin voltage falling T1 threshold, charge re-enabled below this voltage. As Percentage to REGN, TS_T1=0°C w/ 103AT 71.5 72 72.5 %
VT2_RISE TS pin voltage rising T2 threshold, charge back to reduced ICHG above this voltage As Percentage to REGN, TS_T2=10°C w/ 103AT 67.75 68.25 68.75 %
VT2_FALL TS pin voltage falling T2 threshold. Charge back to normal below this voltage As Percentage to REGN, TS_T2=10°C w/ 103AT 66.45 66.95 67.45 %
VT3_FALL TS pin voltage falling T3 threshold, charge to ICHG and reduced VFB_REG below this voltage. As Percentage to REGN, TS_T3=45°C w/ 103AT 44.25 44.75 45.25 %
VT3_RISE TS pin voltage rising T3 threshold. Charge back to normal above this voltage. As Percentage to REGN, TS_T3=45°C w/ 103AT 45.55 46.05 46.55 %
VT5_FALL TS pin voltage falling T5 threshold, charge suspended below this voltage As Percentage to REGN, TS_T5=60°C w/ 103AT 33.875 34.375 34.875 %
VT5_RISE TS pin voltage rising T5 threshold. Charge back to ICHG and reduced VFB_REG above this voltage. As Percentage to REGN, TS_T5=60°C w/ 103AT 35 35.5 36 %
REVERSE MODE BATTERY-PACK NTC MONITOR
VBCOLD_RISE TS pin voltage rising TCOLD threshold. Reverse mode suspended above this voltage As Percentage to REGN (BCOLD = –20°C w/ 103AT) 79.45 80.0 80.55 %
VBCOLD_RISE TS pin voltage rising TCOLD threshold. Reverse mode suspended above this voltage As Percentage to REGN (BCOLD = –10°C w/ 103AT) 76.65 77.15 77.65 %
VBCOLD_FALL TCOLD comparator falling threshold. As Percentage to REGN (–20°C w/ 103AT) 78.2 78.7 79.2 %
VBCOLD_FALL TCOLD comparator falling threshold. As Percentage to REGN (–10°C w/ 103AT) 75.5 75.6 76.5 %
VBHOT_FALL TS pin voltage falling THOT threshold. Reverse mode suspends below this voltage As Percentage to REGN, (BHOT = 55°C w/ 103AT) 37.2 37.7 38.2 %
VBHOT_FALL TS pin voltage falling THOT threshold. Reverse mode suspends below this voltage As Percentage to REGN, (BHOT = 60°C w/ 103AT) 33.875 34.375 34.875 %
VBHOT_FALL TS pin voltage falling THOT threshold. Reverse mode suspends below this voltage As Percentage to REGN, (BHOT 65°C w/ 103AT) 30.75 31.25 31.75 %
VBHOT_RISE TS pin voltage rising THOT threshold. Reverse mode allowed above this voltage As Percentage to REGN, (BHOT = 55°C w/ 103AT) 38.5 39.0 39.95 %
VBHOT_RISE TS pin voltage rising THOT threshold. Reverse mode allowed above this voltage As Percentage to REGN, (BHOT = 60°C w/ 103AT) 35 35.5 36 %
VBHOT_RISE TS pin voltage rising THOT threshold. Reverse mode allowed above this voltage As Percentage to REGN, (BHOT 65°C w/ 103AT) 32.0 32.5 33.0 %
BATTERY CHARGER PROTECTION
VBAT_OV Battery overvoltage threshold VFB rising, as percentage of VFB_REG 102.5 104 105.5 %
VBAT_OVZ Battery overvoltage falling threshold VFB falling, as percentage of VFB_REG 100.5 102 103.5 %
VICHG_OC Battery charge over-current threshold VSRP - VSRN rising 120 170 mV
THERMAL SHUTDOWN
TSHUT Thermal shutdown rising threshold Temperature increasing 150 °C
Thermal shutdown falling threshold Temperature decreasing 135 °C
REGN REGULATOR AND GATE DRIVE SUPPLY (DRV_SUP)
VREGN REGN LDO output voltage IREGN = 20mA 4.8 5 5.2 V
VAC = 5V, IREGN = 20mA 4.35 4.6 V
IREGN REGN LDO current limit VREGN = 4.5V 70 mA
VREGN_OK REGN OK threshold to allow switching REGN rising 3.55 V
VDRV_UVPZ DRV_SUP under-voltage threshold to allow switching DRV_SUP rising 3.7 V
VDRV_OVP DRV_SUP over-voltage threshold to disable switching DRV_SUP rising 12.8 13.2 13.6 V
POWER-PATH MANAGER
VACDRV_REG ACFET drive voltage VACDRV - VVAC, IACDRV = 10µA 10 V
IACDRV_ON ACFET charge pump current limit VACDRV - VVAC = 5V 40 µA
IACDRV_OFF ACFET turnoff current 3 mA
VBATDRV_REG BATFET drive voltage VBATDRV - VBATSRC, VAC = 0V, IBATDRV = 10µA 10 V
IBATDRV_REG BATFET charge pump current limit VBATDRV - VBATSRC = 5V, VAC = 0V 40 µA
IBATDRV_OFF BATFET turnoff current 400 µA
IAC_LOAD VAC discharge load current 16 mA
IBAT_LOAD Battery (SRP) discharge load current 16 mA
SWITCHING FREQUENCY AND SYNC
fSW Switching Frequency RFSW_SYNC = 133kΩ 212 250 288 kHz
RFSW_SYNC = 50kΩ 425 500 575 kHz
VIH_SYNC FSW_SYNC input high threshold 1.3 V
VIL_SYNC FSW_SYNC input low threshold 0.4 V
PWSYNC FSW_SYNC input pulse width 80 ns
PWM DRIVERS
RHIDRV1_ON Buck side high-side turnon resistance VBTST1 - VSW1 = 5V 3.4 Ω
RHIDRV1_OFF Buck side high-side turnoff resistance VBTST1 - VSW1 = 5V 1.0 Ω
VBTST1_REFRESH Bootstrap refresh comparator threshold voltage BTST1 falling, VBTST1 - VSW1 when low-side refresh pulse is requested 2.7 3.1 3.9 V
RLODRV1_ON Buck side low-side turnon resistance VREGN = 5V 3.4 Ω
RLODRV1_OFF Buck side low-side turnoff resistance VREGN = 5V 1.0 Ω
tDT1 Buck side dead time, both edges 45 ns
ANALOG-TO-DIGITAL CONVERTER (ADC)
tADC_CONV Conversion-time, each measurement ADC_SAMPLE[1:0] = 00 24 ms
ADC_SAMPLE[1:0] = 01 12 ms
ADC_SAMPLE[1:0] = 10 6 ms
ADCRES Effective resolution ADC_SAMPLE[1:0] = 00 14 15 bits
ADC_SAMPLE[1:0] = 01 13 14 bits
ADC_SAMPLE[1:0] = 10 12 13 bits
ADC MEASUREMENT RANGE AND LSB
IAC_ADC Input current ADC reading (positive or negative) Range with 2mΩ RAC_SNS –50000 50000 mA
LSB with 2mΩ RAC_SNS 2 mA
IBAT_ADC Battery current ADC reading (positive or negative) Range with 5mΩ RBAT_SNS –20000 20000 mA
LSB with 5mΩ RBAT_SNS 2 mA
VAC_ADC Input voltage ADC reading Range 0 65534 mV
LSB 2 mV
VBAT_ADC Battery voltage ADC reading Range 0 65534 mV
LSB 2 mV
VSYS_ADC System voltage ADC reading Range 0 65534 mV
LSB 2 mV
TSADC TS voltage ADC reading, as percentage of REGN Range 0 99.9 %
LSB 0.098 %
VFB_ADC FB voltage ADC reading Range 0 2047 mV
LSB 1 mV
I2C INTERFACE (SCL, SDA)
VIH Input high threshold level 1.3 V
VIL Input low threshold level 0.4 V
VOL Output low threshold level Sink current = 5mA 0.4 V
IIN_BIAS High-level leakage current Pull up rail 3.3V 1 µA
LOGIC I/O PIN (CE, PG, STAT1, STAT2)
VIH Input high threshold level (CE) 1.3 V
VOL Output low threshold level (CE, PG, STAT1, STAT2) Sink current = 5mA 0.4 V
VIL Input low threshold level (CE) 0.4 V
IOUT_BIAS High-level leakage current (CE, PG, STAT1, STAT2) Pull up rail 3.3V 1 µA