1 Features

AEC-Q100 qualified for automotive applications - Temperature options:
- DRV3233E: –40°C to +150°C, T_A
- DRV3233Q: –40°C to +125°C,T_A
Functional Safety-Compliant
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design available
- Systematic capability up to ASIL D targeted
Three phase half-bridge gate driver
- Drives six N-channel MOSFETs (NMOS)
- 4.5 to 60V wide operating voltage range
- Bootstrap architecture for high-side gate driver
- Charge pump for 50mA average gate current
- 100% PWM duty cycle support
- Overdrive supply of external switches
Smart Gate Drive architecture
- 45-level configurable peak gate drive current up to 1000 / 2000mA (source / sink)
- Three-step dynamic drive current control
- Soft shutdown for power stage protection
Low-side Current Sense Amplifier
- Sub-1mV low input offset across temperature
- 9-level adjustable gain
SPI-based detailed configuration and diagnostics
DRVOFF pin to disable driver independently
High voltage wake up pin (nSLEEP)
Multiple PWM interface options available
- 6x, 3x, 1x PWM Modes
- PWM over SPI
Supports 3.3V, and 5V Logic Inputs
Optional programmable OTP for reset settings
Advanced and configurable protection features
- Battery and power supply voltage monitors
- Phase feedback comparator
- MOSFET V_DSand R_senseover current monitors
- Analog Built-In-Self-Test, Clock monitors
- Fault condition indicator pin