SLYS018F April   2018  – October 2024 INA181-Q1 , INA2181-Q1 , INA4181-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 High Bandwidth and Slew Rate
      2. 7.3.2 Bidirectional Current Monitoring
      3. 7.3.3 Wide Input Common-Mode Voltage Range
      4. 7.3.4 Precise Low-Side Current Sensing
      5. 7.3.5 Rail-to-Rail Output Swing
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Unidirectional Mode
      3. 7.4.3 Bidirectional Mode
      4. 7.4.4 Input Differential Overload
      5. 7.4.5 Shutdown Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Basic Connections
      2. 8.1.2 RSENSE and Device Gain Selection
      3. 8.1.3 Signal Filtering
      4. 8.1.4 Summing Multiple Currents
      5. 8.1.5 Detecting Leakage Currents
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Common-Mode Transients Greater Than 26 V
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

at TA = 25°C, VS = 5V, VREF = VS / 2, VIN+ = 12V, and VSENSE = VIN+ – VIN– (unless otherwise noted)
PARAMETER CONDITIONS MIN TYP MAX UNIT
INPUT
CMRR Common-mode rejection ratio, RTI (1) VIN+ = 0V to 26V, VSENSE = 0mV,
TA = –40°C to +125°C		 84 100 dB
VOS Offset voltage, RTI VSENSE = 0mV, VIN+ = 0V ±25 ±150 μV
VSENSE = 0mV ±100 ±500 μV
dVOS/dT Offset drift, RTI VSENSE = 0mV, TA = –40°C to +125°C 0.2 1 μV/°C
PSRR RTI vs power supply ratio VS = 2.7V to 5.5V, VIN+ = 12V,

VSENSE = 0mV		 ±8 ±40 μV/V
IIB Input bias current VSENSE = 0mV, VIN+ = 0V -6 μA
VSENSE = 0mV 75 μA
IIO Input offset current VSENSE = 0mV ±0.05 μA
OUTPUT
G Gain A1 devices 20 V/V
A2 devices 50 V/V
A3 devices 100 V/V
A4 devices 200 V/V
EG Gain error VOUT = 0.5V to VS – 0.5V,
TA = –40°C to +125°C		 ±0.1% ±1%
Gain error vs temperature TA = –40°C to +125°C 1.5 20 ppm/°C
Nonlinearity error VOUT = 0.5V to VS – 0.5V ±0.01%
Maximum capacitive load No sustained oscillation 1 nF
VOLTAGE OUTPUT (2) 
VSP Swing to VS power-supply rail (3) RL = 10kΩ to GND, TA = –40°C to +125°C (VS) – 0.02 (VS) – 0.03 V
VSN Swing to GND (3) RL = 10kΩ to GND,  TA = –40°C to +125°C (VGND) + 0.0005 (VGND) + 0.005 V
FREQUENCY RESPONSE
BW Bandwidth A1 devices, CLOAD = 10pF 350 kHz
A2 devices, CLOAD = 10pF 210 kHz
A3 devices, CLOAD = 10pF 150 kHz
A4 devices, CLOAD = 10pF 105 kHz
SR Slew rate 2 V/μs
NOISE, RTI (1)
Voltage noise density 40 nV/√Hz
POWER SUPPLY
IQ Quiescent current INA181 VSENSE = 0mV 195 260 μA
VSENSE = 0mV, TA = –40°C to +125°C 300
INA2181 VSENSE = 0mV  356 500 μA
VSENSE = 0mV, TA = –40°C to +125°C 520
INA4181 VSENSE = 0mV  690 900 μA
VSENSE = 0mV, TA = –40°C to +125°C 1000
(1) RTI = referred-to-input.
(3) Swing specifications are tested with an overdriven input condition.