SNAS601G August 2012 – September 2014 LMX2581
PRODUCTION DATA.
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Vcc | Power Supply Voltage | -0.3 | 3.6 | V |
| VIN | Input Voltage to Pins other than Vcc Pins | -0.3 | (Vcc + 0.3) | V |
| TL | Lead Temperature (solder 4 sec.) | +260 | °C | |
| TJ | Junction Temperature | +150 | °C | |
| VOSCin | Voltage on OSCin (Pin29) | ≤1.8 with Vcc Applied ≤1 with Vcc=0 |
Vpp | |
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| TSTG | Storage Temperature Range | -65 | 150 | °C | |
| VESD | Electrostatic Discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(2) | 2500 | V | |
| Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(3) | 1250 | ||||
| Machine Model (MM)(4) | 250 | ||||
| MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|
| Vcc | Power Supply Voltage | 3.15 | 3.3 | 3.45 | V |
| TJ | Junction Temperature | 125 | °C | ||
| TA | Ambient Temperature | -40 | 85 | °C |
| THERMAL METRIC(1) | DAP 32 PINS |
UNIT | |
|---|---|---|---|
| RθJA | Junction-to-ambient thermal resistance | 30 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 4 | |
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||||
|---|---|---|---|---|---|---|---|---|---|
| CURRENT CONSUMPTION | |||||||||
| ICC | Entire Chip Supply Current | One Output Enabled OUTx_PWR = 15 |
178 | mA | |||||
| ICCCore | Supply Current Except for Output Buffers | Output Buffers and VCO Divider Disabled. | 134 | mA | |||||
| ICCRFout | Additive Current for EachOutput Buffer | OUTx_PWR = 15 | 44 | mA | |||||
| ICCVCO_DIV | Additive VCO Divider Current | VCO Divider Enabled | 20 | mA | |||||
| ICCPD | Power Down Current | Device Powered Down (CE Pin = LOW) |
7 | mA | |||||
| OSCin REFERENCE INPUT | |||||||||
| fOSCin | OSCin Frequency Range | Doubler Enabled | 5 | 250 | MHz | ||||
| Doubler Disabled | 5 | 900 | |||||||
| vOSCin | OSCin Input Voltage | AC Coupled | 0.4 | 1.7 | Vpp | ||||
| SpurFoscin | Oscin Spur | Foscin = 100 MHz, Offset = 100 MHz | -81 | dBc | |||||
| PLL | |||||||||
| fPD | Phase Detector Frequency | 200 | MHz | ||||||
| KPD | Charge Pump Gain | Gain = 1X | 110 | µA | |||||
| Gain = 2X | 220 | ||||||||
| ... | ... | ||||||||
| Gain = 31X | 3410 | ||||||||
| PNPLL_1/f_Norm | Normalized PLL 1/f Noise (1) |
Gain =31X Normalized to 1 GHz carrier and 10 kHz Offset |
–120.8 | dBc /Hz | |||||
| PNPLL_FOM | PLL Figure of Merit (Normalized Noise Floor) (1) |
Gain =31X.
Normalized to PLL1 and fPD=1Hz |
–229 | dBc /Hz | |||||
| fRFin | External VCO Input Pin Frequency | Internal VCOs Bypassed (OUTA_PD=OUTB_PD=1) |
0.5 | 2.2 | GHz | ||||
| pRFin | External VCO Input Pin Power | Internal VCOs Bypassed (OUTA_PD=OUTB_PD=1) |
0 | +8 | dBm | ||||
| SpurFpd | Phase Detector Spurs (2) |
Fpd = 25 MHz | –85 | dBc | |||||
| Fpd = 100 MHz | –81 | ||||||||
| OUTPUTS | |||||||||
| pRFoutA+/-
pRFoutB+/- |
Output Power Level(5)(5) | Inductor Pull-Up Fout=2.7 GHz |
OUTx_PWR=15 | 7.3 | dBm | ||||
| OUTx_PWR=45 | 12 | ||||||||
| H2RFoutX+/- | Second Harmonic (6) |
Fout = 2.7 GHz | OUTx_PWR=15 | –25 | dBc | ||||
| VCO | |||||||||
| fVCO | Before the VCO Divider | All VCO Cores Combined | 1880 | 3760 | |||||
| KVCO | VCO Gain | Vtune = 1.3 Volts |
Core 1 | 12 to 24 | MHz/V | ||||
| Core 2 | 15 to 30 | ||||||||
| Core 3 | 20 to 37 | ||||||||
| Core 4 | 21 to 37 | ||||||||
| ΔTCL | Allowable Temperature Drift (3) |
VCO not being recalibrated | Fvco ≥2.5 GHz | –125 | +125 | °C | |||
| Fvco < 2.5 GHz | –100 | +125 | |||||||
| tVCOCal | VCO Calibration Time (4) |
fOSCin = 100 MHz fPD = 100 MHz Full Band Change 1880 — 3760 MHz |
No Pre-programming | 140 | us | ||||
| With Pre-programming | 10 | ||||||||
| PNVCO | VCO Phase Noise (OUTx_PWR =15) |
fVCO = 1.9 GHz Core 1 |
10 kHz Offset | –85.4 | dBc /Hz | ||||
| 100 kHz Offset | –114.5 | ||||||||
| 1 MHz Offset | –137.0 | ||||||||
| 10 MHz Offset | –154.2 | ||||||||
| 40 MHz Offset | –156.7 | ||||||||
| fVCO = 2.2 GHz Core 2 |
10 kHz Offset | –84.6 | dBc /Hz | ||||||
| 100 kHz Offset | –114.1 | ||||||||
| 1 MHz Offset | –137.5 | ||||||||
| 10 MHz Offset | –154.5 | ||||||||
| 40 MHz Offset | –156.1 | ||||||||
| fVCO = 2.7 GHz Core 3 |
10 kHz Offset | –81.7 | dBc /Hz | ||||||
| 100 kHz Offset | –112.2 | ||||||||
| 1 MHz Offset | –136.0 | ||||||||
| 10 MHz Offset | –153.1 | ||||||||
| 40 MHz Offset | –155.0 | ||||||||
| fVCO = 3.3 GHz Core 4 |
10 kHz Offset | –79.0 | dBc /Hz | ||||||
| 100 kHz Offset | –108.6 | ||||||||
| 1 MHz Offset | –132.6 | ||||||||
| 10 MHz Offset | –152.0 | ||||||||
| 40 MHz Offset | –155.0 | ||||||||
| DIGITAL INTERFACE (DATA, CLK, LE, CE, MUXout, BUFEN, LD) | |||||||||
| VIH | High-Level Input Voltage | 1.4 | Vcc | V | |||||
| VIL | Low Level Input Voltage | 0.4 | V | ||||||
| IIH | High-Level Input Current | VIH = 1.75 V | –5 | 5 | µA | ||||
| IIL | Low-Level Input Current | VIL = 0 V | –5 | 5 | µA | ||||
| VOH | High-Level Output Voltage | IOH = -500 µA | 2 | V | |||||
| VOL | Low-Level Output Voltage | IOL = -500 µA | 0 | 0.4 | V | ||||
| MIN | TYP | MAX | UNIT | |||
|---|---|---|---|---|---|---|
| tES | Clock to Enable Low Time | See Figure 1 | 35 | ns | ||
| tCS | Data to Clock Set Up Time | See Figure 1 | 10 | ns | ||
| tCH | Data to Clock Hold Time | See Figure 1 | 10 | ns | ||
| tCWH | Clock Pulse Width High | See Figure 1 | 25 | ns | ||
| tCWL | Clock Pulse Width Low | See Figure 1 | 25 | ns | ||
| tCES | Enable to Clock Set Up Time | See Figure 1 | 10 | ns | ||
| tEWH | Enable Pulse Width High | See Figure 1 | 10 | ns |
Figure 1. Serial Data Input Timing











