TIDUF22 January   2023

 

  1.   Description
  2.   Resources
  3.   Features
  4.   Applications
  5.   5
  6. 1System Description
    1. 1.1 Key System Specifications
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1  6-W Auxiliary Power Supply
      2. 2.2.2  AC Input Current Sensing
      3. 2.2.3  DC Bus Voltage Sensing
      4. 2.2.4  AC Input Voltage Sensing
      5. 2.2.5  GaN Driving
      6. 2.2.6  Inrush Current Protection at Powering On
      7. 2.2.7  Overcurrent Protection
      8. 2.2.8  AC Input Undervoltage Protection
      9. 2.2.9  DC Bus Overvoltage Protection
      10. 2.2.10 GaN Temperature Monitor and Protection
      11. 2.2.11 Heat Sink Temperature Monitor and Protection
      12. 2.2.12 UART Heartbeat Report
      13. 2.2.13 Motor Control Interface
    3. 2.3 Highlighted Products
      1. 2.3.1 LMG352xR030
      2. 2.3.2 TMS320F28002x
      3. 2.3.3 UCC2871x
      4. 2.3.4 TLV906x
      5. 2.3.5 TPS54308
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements and Assembly
      1. 3.1.1 Test Equipment Requirements
    2. 3.2 Software Requirements
    3. 3.3 Test Setup
    4. 3.4 Test Results
      1. 3.4.1 Test Procedures
        1. 3.4.1.1 Test Procedures Under 90 VAC
        2. 3.4.1.2 Test Procedures Under 220 VAC
    5. 3.5 Performance Data: Efficiency, iTHD, and Power Factor
    6. 3.6 Functional Waveforms
      1. 3.6.1  Test Under 90 VAC, 800-Ω Load
      2. 3.6.2  Power-On Sequence Test Under 220 VAC
      3. 3.6.3  Waveform With Heavy Load
      4. 3.6.4  Buck Auxiliary Power Supply Tests
      5. 3.6.5  AC Drop Test
      6. 3.6.6  GaN Switching Performance
      7. 3.6.7  Thermal Test
      8. 3.6.8  Power-Off Sequence
      9. 3.6.9  Surge Test
      10. 3.6.10 Conducted Emission Test
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 Support Resources
    4. 4.4 Trademarks
  10. 5About the Author

2.3.1 LMG352xR030

The LMG352xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG352xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching safety operation area (SOA) compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.