TIDUF68A February   2024  – March 2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 LMG2100
      2. 2.3.2 INA241A
      3. 2.3.3 AMC0106M05
      4. 2.3.4 LMR38010
  9. 3System Design Theory
    1. 3.1 Three-Phase GaN Inverter Power Stage
      1. 3.1.1 LMG2100 GaN Half-Bridge Power Stage
    2. 3.2 Inline Shunt Precision Phase-Current Sensing
      1. 3.2.1 INA241A Ultra-Precise Current Sense Amplifier with Enhanced PWM Rejection
      2. 3.2.2 AMC0106M05 Precision, ±50mV Input, Functionally Isolated, Delta-Sigma Modulator
    3. 3.3 Phase Voltage and DC Input Voltage Sensing
    4. 3.4 Power-Stage PCB Temperature Monitor
    5. 3.5 Power Management
      1. 3.5.1 48V to 5V DC/DC Converter
      2. 3.5.2 5V to 3.3V Rail
    6. 3.6 Interface to Host MCU
  10. 4Hardware, Software, Testing Requirements, and Test Results
    1. 4.1 Hardware Requirements
      1. 4.1.1 TIDA-010936 PCB Overview
      2. 4.1.2 TIDA-010936 Jumper Settings
      3. 4.1.3 Interface to C2000™ MCU LaunchPad™ Development Kit
    2. 4.2 Software Requirements
    3. 4.3 Test Setup
    4. 4.4 Test Results
      1. 4.4.1 Power Management and System Power Up and Power Down
      2. 4.4.2 GaN Inverter Half-Bridge Module Switch Node Voltage
        1. 4.4.2.1 Switch Node Voltage Transient Response at 48V DC Bus
          1. 4.4.2.1.1 Output Current at ±1A
          2. 4.4.2.1.2 Output Current at ±10A
        2. 4.4.2.2 Impact of PWM Frequency to DC-Bus Voltage Ripple
        3. 4.4.2.3 Efficiency Measurements
        4. 4.4.2.4 Thermal Analysis
        5. 4.4.2.5 No Load Loss Test (COSS Losses)
      3. 4.4.3 Phase-Current Sensing
  11. 5Design and Documentation Support
    1. 5.1 Design Files [Required Topic]
      1. 5.1.1 Schematics
      2. 5.1.2 BOM
      3. 5.1.3 PCB Layout Recommendations
        1. 5.1.3.1 Layout Prints
      4. 5.1.4 Altium Project
      5. 5.1.5 Gerber Files
      6. 5.1.6 Assembly Drawings
    2. 5.2 Tools and Software
    3. 5.3 Documentation Support
    4. 5.4 Support Resources
    5. 5.5 Trademarks
  12. 6About the Author
  13. 7Recognition
  14. 8Revision History

1.1 Key System Specifications

The key specifications of the TIDA-010936 small form factor three-phase GaN inverter reference design are provided in Table 1-1. The design can be directly connected to a C2000 MCU LaunchPad development 40-pin instance (J1–J3 and J4–J2). A zero Ohm resistor option is provided on the TIDA-010936 to the power the LaunchPad with 3.3V. Table 1-2 and Table 1-3 introduce the TIDA-010936 pin assignment.

Table 1-1 Three-Phase Inverter Key Specifications
PARAMETER TYPICAL VALUE COMMENT
DC input voltage 48V (12V to 60V) 80V absolute maximum
Maximum three-phase continues output current 16ARMS Test condition: No heat sink at 25°C ambient temperature
Maximum output power 825W at 48VDC At power factor 0.9
Power FET type GaN technology Half-bridge power module with integrated high and low side gate drivers (LMG2100)
PWM switching frequency (tested) 20kHz to 80kHz Higher than 80kHz PWM frequencies supported
PWM dead band 16.66ns –
Currents sense amplifier

(Phase A and B)

 1mΩ shunt | INA241A Differential, non-isolated current sense amplifier with 50V / V and enhanced PWM rejection (INA241A)
Phase current maximum range

(Phase A and B)

 ±33A Scaled to 0V to 3.3V, 1.65V bias
Functional isolated modulator

(Phase C)

 1mΩ shunt | AMC0106M05 Precision, ±50mV input, functional isolated, Delta-Sigma modulator with external clock
Phase current maximum range

(Phase C)

 ±50A

3.3V digital interface (clock and data) to MCU
PCB layer stack 4-layer, 2oz copper
GaN-FET PCB area size 16mm × 51mm Three-phase GaN plus shunt
PCB size 68.63mm × 70mm Dimensions in mil: 2702mil × 2756mil
Temperature range –40°C to 85°C
Interface to host processor TI BoosterPack compatible See Table 1-2 and Table 1-3 for pin assignment
3.3V or 5V supply option for LaunchPad Total 600mA (max) Enable with 0Ω resistor
Table 1-2 Interface Specification Header J2
PIN SIGNAL I/O (3.3V) PIN SIGNAL I/O (3.3V)
J2-1 3.3V supply (optional) O or N/C (R48 not populated) J2-2 5 supply (optional) O or N/C (R47 not populated)
J-23 NC J2-4 GND GND
J2-5 NC J2-6 VDC_Bus O (0 to 3.3V)(1)
J2-7 NC J2-8 VA O (0 to 3.3V)(1)
J2-9 NC J2-10 VB O (0 to 3.3V)(1)
J2-11 NC J2-12 VC O (0 to 3.3V)(1)
J2-13 NC J2-14 IA O (0 to 3.3V)
J2-15 NC J2-16 IB O (0 to 3.3V)
J2-17 NC J2-18 Temp O (0 to 3.3V)
J2-19 NC J2-20 NC
(1) Overvoltage protection with Schottky diodes provides output voltage remains below 3.6V
Table 1-3 Interface Specification Header J3
PIN SIGNAL I/O (3.3V) PIN SIGNAL I/O (3.3V)
J3-1 PWM A (high-side) I (10k PD in buffer) J3-2 GND GND
J3-3 PWM A (low-side) I (10k PD in buffer) J3-4 NC
J3-5 PWM B (high-side) I (10k PD in buffer) J3-6 SD_CLK

I
J3-7 PWM B (low-side) I (10k PD in buffer) J3-8 DAT_PhC

O

J3-9

 PWM C (high-side) I (10k PD in buffer) J3-10 OC O
J3-11 PWM C (low-side) I (10k PD in buffer) J3-12 NC
J3-13 SD_CLK

O

 J3-14 NC
J3-15 CLK_PhC

I

 J3-16 NC
J3-17 NC J3-18 NC
J3-19 NC J3-20 NC