SCDS141D October   2003  – September 2021 SN74CB3Q3305

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions (1)
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DCU|8
  • PW|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • High-bandwidth data path (up to 500 MHz)(1)
  • 5-V tolerant I/Os with device powered up or powered down
  • Low and flat ON-state resistance (ron) characteristics over operating range
    (ron = 3 Ω typical)
  • Supports input voltage beyond supply on data I/O ports
    • 0 to 5 V switching with 3.3 V VCC
    • 0 to 3.3 V switching with 2.5 V VCC
  • Bidirectional data flow with near-zero propagation delay
  • Low input or output capacitance minimizes loading and signal distortion
    (Cio(OFF) = 3.5 pF typical)
  • Fast switching frequency (fOE = 20 MHz maximum)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 0.25 mA typical)
  • VCC operating range from 2.3 V to 3.6 V
  • Data I/Os support 0 to 5 V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)
  • Control inputs can be driven by TTL or
    5 V/3.3 V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II
1. For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.