Gallium nitride (GaN) ICs

Maximize power density and efficiency with our portfolio of GaN power devices for every power level

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Our family of gallium nitride (GaN) FETs with integrated gate drivers and GaN power devices offers the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors switch much faster than silicon MOSFETs, offering the potential to achieve lower-switching losses. Our GaN ICs can be used in a wide range of applications, from telecommunications, servers, motor drives and laptop adapters to on-board chargers for electric vehicles.

Find your GaN IC

LMG3422R050 NEW

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

Approx. price (USD) 1ku | 7.94
LMG3425R050 NEW

600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Approx. price (USD) 1ku | 10.476
LMG3425R030 NEW

600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Approx. price (USD) 1ku | 11.844
LMG3422R030 NEW

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Approx. price (USD) 1ku | 10.764
LMG3525R030-Q1 NEW

Automotive 650-V 30-mΩ GaN FET with integrated driver, protection, temp. reporting, ideal diode mode

Approx. price (USD) 1ku | 17.186

Advantages of TI GaN technology

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Faster switching speed than discrete GaN FETs

Our GaN FETs with integrated drivers can reach switching speeds of 150 V/ns. These switching speed, combined with a low-inductance package, reduce losses, enable clean switching and minimize ringing.

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Smaller magnetics, higher power density

Enabled by faster switching speeds, our GaN devices can help you achieve switching frequencies over 500 kHz, which results in up to 60% smaller magnetics, enhanced performance and lower system cost.

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Built for reliability

Our GaN devices are designed to keep high-voltage systems safe thanks to a proprietary GaN-on-Si process, more than 40 million hours of reliability testing and protection features.

Why choose GaN

Understanding GaN technology

GaN offers higher power density, more reliable operation and improved efficiency over traditional silicon-only based solutions. Head to our technology page to learn more about GaN as a power transistor technology, discover featured GaN applications, hear from our customers and see for yourself how TI GaN can help you minimize the weight, size and cost of your next power design.

Technical resources

Application note
Application note
Maximizing the Performance of GaN with Ideal Diode Mode
Learn how the ideal diode mode, a unique feature of some of our GaN devices, is used to minimize deadtime losses.
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White paper
White paper
Direct-drive configuration for GaN devices (Rev. A)
Our family of dMode GaN devices allows for normally off operation without being cascode. Learn more about direct drive architecture and its benefits.
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Application note
Application note
Third quadrant operation of GaN
Learn more about GaN's operation in the third quadrant and what you need to know to minimize deadtime losses.
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Design & development resources

Reference design
11-kW, bidirectional, three-phase ANPC based on GaN reference design

This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter (...)

Reference design
4-kW single-phase totem pole PFC reference design with C2000 and GaN
This reference design is a 4-kW CCM totem-pole PFC with F280049/F280025 control card and LMG342x EVM board. This design demos a robust PFC solution, which avoids isolated current sense by putting the controller's ground in the middle of a MOSFET leg. Benefitting from non-isolation, AC current (...)
Reference design
GaN-based, 6.6-kW, bidirectional, onboard charger reference design
The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)

Reference designs related to Gallium nitride (GaN) ICs

Use our reference design selection tool to find designs that best match your application and parameters.