Gallium nitride (GaN) ICs

Maximize power density and efficiency with our portfolio of GaN power devices for every power level

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Our family of gallium nitride (GaN) FETs with integrated gate drivers and GaN power devices offers the most efficient GaN solution with lifetime reliability and cost advantages. GaN transistors switch much faster than silicon MOSFETs, offering the potential to achieve lower-switching losses. Our GaN ICs can be used in a wide range of applications, from telecommunications, servers, motor drives and laptop adapters to on-board chargers for electric vehicles.

Find your GaN IC

LMG3425R050 NEW

600-V 50-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Approx. price (USD) 1ku | 10.476
LMG3422R050 NEW

600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

Approx. price (USD) 1ku | 7.94
LMG3425R030 NEW

600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode

Approx. price (USD) 1ku | 11.844
LMG3422R030 NEW

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Approx. price (USD) 1ku | 10.764

Advantages of TI GaN technology

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Faster switching speed than discrete GaN FETs

Our GaN FETs with integrated drivers can reach switching speeds of 150 V/ns. These switching speed, combined with a low-inductance package, reduce losses, enable clean switching and minimize ringing.

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Smaller magnetics, higher power density

Enabled by faster switching speeds, our GaN devices can help you achieve switching frequencies over 500 kHz, which results in up to 60% smaller magnetics, enhanced performance and lower system cost.

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Built for reliability

Our GaN devices are designed to keep high-voltage systems safe thanks to a proprietary GaN-on-Si process, more than 40 million hours of reliability testing and protection features.

Why choose GaN

Understanding GaN technology

GaN offers higher power density, more reliable operation and improved efficiency over traditional silicon-only based solutions. Head to our technology page to learn more about GaN as a power transistor technology, discover featured GaN applications, hear from our customers and see for yourself how TI GaN can help you minimize the weight, size and cost of your next power design.

Technical resources

Application note
Application note
Maximizing the Performance of GaN with Ideal Diode Mode
Learn how the ideal diode mode, a unique feature of some of our GaN devices, is used to minimize deadtime losses.
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White paper
White paper
Direct-drive configuration for GaN devices (Rev. A)
Our family of dMode GaN devices allows for normally off operation without being cascode. Learn more about direct drive architecture and its benefits.
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Application note
Application note
Third quadrant operation of GaN
Learn more about GaN's operation in the third quadrant and what you need to know to minimize deadtime losses.
document-pdfAcrobat PDF

Discover featured applications

Telecom & server power
Reach 80 Plus® Titanium standards with 96.5% total energy efficiency and over 100-W/in^3 power density with TI GaN technology

Reach 80 Plus® Titanium standards with 96.5% total energy efficiency and over 100-W/in^3 power density with TI GaN technology

Design telecom and server systems that support storage, cloud-based applications, central computing power and more using our GaN devices. To help meet your design requirements for energy efficiency, our designs can reach 80® Plus Titanium standards and enable power-factor correction (PFC) efficiencies over 99%.

Benefits

  • >99% efficiency enabled by GaN in a totem-pole bridgeless PFC topology
  • Switching frequencies >500 kHz in isolated DC/DC converters, resulting in decreased magnetics
  • Integrated gate drivers reduce parasitic losses and make system-level design easier

Featured resources

REFERENCE DESIGNS
  • PMP23069 – 3.6-kW single-phase totem-pole bridgeless PFC reference design with a > 180-W/in³ power density
  • PMP23126 – 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density
  • PMP40988 – Variable-frequency, ZVS, 5-kW, GaN-based, two-phase totem-pole PFC reference design
PRODUCTS
  • LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3411R150 – 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
Solar & energy storage systems
Achieve beyond 1.2-kW/L power density in bidirectional AC/DC power conversion systems with TI GaN technology

Achieve beyond 1.2-kW/L power density in bidirectional AC/DC power conversion systems with TI GaN technology

Develop systems powered by solar and wind energy with our GaN devices, which help you design smaller, more efficient AC/DC inverters and rectifiers and DC/DC inverters. With GaN-enabled bidirectional DC/DC conversion, you can integrate energy storage systems into solar inverters, reducing energy dependency on the grid.

Benefits

  • 3x higher power density (>1.2 kW/L) and lower weight than existing AC/DC and DC/DC converters. 
  • The fast-switching properties of GaN at 140 kHz increase 20% higher power density over SiC FETs
  • System cost parity because of lower-cost magnetics versus 2-level SiC topology

Featured resources

REFERENCE DESIGNS
  • TIDA-010210 – 11-kW, bidirectional, three-phase ANPC based on GaN reference design
PRODUCTS
  • LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3522R030-Q1 – Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
Battery test
Enable higher channel density and reduced AC/DC converter size in battery tester systems with TI GaN technology

Enable higher channel density and reduced AC/DC converter size in battery tester systems with TI GaN technology

Decrease the size of AC/DC power supplies with our GaN FETs with integrated gate drivers. Our GaN devices switch at a higher frequency than MOSFETS and SiC FETs, drastically improving the tester channel density of the test equipment and enabling faster power-supply transient response time.

Benefits

  • >99% efficiency enabled by GaN in a totem-pole bridgeless PFC topology
  • >200-kHz switching frequency in the DC/DC stage, enabling faster charge-to-discharge transition within 1 ms
  • Integrated drivers reduce parasitic losses, enabling easier system-level design

Featured resources

END-EQUIPMENT / SUB-SYSTEM
REFERENCE DESIGNS
  • TIDM-02008 – Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU
  • PMP40690 – 4-kW interleaved CCM totem pole bridgeless PFC reference design using C2000™ MCU and GaN
PRODUCTS
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3410R070 – 600-V 70mΩ GaN with integrated driver and protection
Automotive, OBC & DC/DC converter
Enable high power density in electric vehicles with TI GaN technology

Enable high power density in electric vehicles with TI GaN technology

The next generation of on-board chargers (OBCs) and high-to-low-voltage DC/DC converters in hybrid-electric (HEV) and electric vehicles (EV) are using GaN power devices to switch at higher frequencies and reduce the size of magnetics. This higher switching frequency and reduced size translates to higher power density compared to silicon and SiC-based OBCs. 

Benefits

  • 3.8-kW/L power density, which means more power than SiC at the same volume
  • >500-kHz switching frequency for CLLLC and 120-kHz for PFC 
  • 96.5% combined system-level efficiency 
  • Integrated gate driver simplifies system-level design

Featured resources

PRODUCTS
  • LMG3522R030-Q1 – Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
DESIGN TOOLS AND SIMULATION
  • POWERSTAGE-DESIGNER – Power Stage Designer™ Tool of Most Commonly Used Switch-mode Power Supplies
HVAC & appliances
Realize higher power efficiency and a smaller form factor in PFC power stages for heating, ventilation and air conditioning (HVAC) and appliances with TI GaN devices

Realize higher power efficiency and a smaller form factor in PFC power stages for heating, ventilation and air conditioning (HVAC) and appliances with TI GaN devices

Power-factor correction (PFC) power stages are necessary for heating, ventilating and air conditioning (HVAC) systems to meet new energy standards, like EN6055. GaN power stages, when compared with insulated-gate bipolar transistors (IGBTs), have higher efficiency, which reduces magnetics, heat-sink size and total system cost.

Benefits

  • High switching frequency up to 60 kHz reduces the size of magnetics
  • Reduced switching losses result in power stages with efficiency >99%
  • Small size and the ability to be cooled naturally reduce design size and cost

Featured resources

REFERENCE DESIGNS
  • TIDA-010203 – 4-kW single-phase totem pole PFC reference design with C2000 and GaN
PRODUCTS
  • LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
  • LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting

Design & development resources

Reference design
11-kW, bidirectional, three-phase ANPC based on GaN reference design

This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter (...)

Reference design
4-kW single-phase totem pole PFC reference design with C2000 and GaN
This reference design is a 4-kW CCM totem-pole PFC with F280049/F280025 control card and LMG342x EVM board. This design demos a robust PFC solution, which avoids isolated current sense by putting the controller's ground in the middle of a MOSFET leg. Benefitting from non-isolation, AC current (...)
Reference design
GaN-based, 6.6-kW, bidirectional, onboard charger reference design
The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation (...)

Reference designs related to Gallium nitride (GaN) ICs

Use our reference design selection tool to find designs that best match your application and parameters.