Gate drivers
Efficiently and reliably drive any power switch at any power level for any application
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Automotive 30-A isolated 5.7-kV VRMS IGBT/SiC MOSFET gate driver with advanced protection features
3-A, 120-V half bridge gate driver with 5-V UVLO and enable
Wide band-gap technologies
High-speed GaN gate drivers enabling high power density and design simplicity for every topology
The combination of fast timing specifications, leadless packages and narrow pulse-width response of our drivers enable you to switch FETs fast. Added features like gate-voltage regulation, programmable dead time and low internal power consumption make sure that high-frequency switching yields the highest efficiency possible.
GaN and SiC technologies enable increased efficiency in power supplies
An Introduction to Automotive LIDAR (Rev. A)
Optimizing multi-megahertz GaN driver design white paper (Rev. A)
Silicon carbide (SiC) gate drivers for energy-efficient, robust and compact system design
Boost the efficiency of your design with strong drive currents, high CMTI and short propagation delays of our SiC and IGBT gate drivers. Our SiC gate drivers help you achieve robust isolation in your system with fast integrated short-circuit protection and high surge immunity. Reduce your system size, weight and cost by switching SiC at higher PWM frequencies with our fast, robust and reliable drivers.