The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.
The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.
The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.
The AFE10004-EP is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM. This design allows correction any temperature effects to be corrected without additional external circuitry. After start-up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications.
The AFE10004-EP has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN.
The function integration and wide operating temperature range make the AFE10004-EP an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.