Product details

VDS (V) 100 Configuration Single Rds(on) max at VGS=10 V (mOhms) 2.7 IDM - pulsed drain current (Max) (A) 400 QG typ (nC) 118 QGD typ (nC) 17 Package (mm) TO-220 VGS (V) 20 VGSTH typ (V) 2.5 ID - silicon limited at Tc=25degC (A) 259 ID - package limited (A) 150 Logic level No
VDS (V) 100 Configuration Single Rds(on) max at VGS=10 V (mOhms) 2.7 IDM - pulsed drain current (Max) (A) 400 QG typ (nC) 118 QGD typ (nC) 17 Package (mm) TO-220 VGS (V) 20 VGSTH typ (V) 2.5 ID - silicon limited at Tc=25degC (A) 259 ID - package limited (A) 150 Logic level No
TO-220 (KCS) 3 88 mm² 10.15 x 15.4
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

This 100 V, 2.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 100 V, 2.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

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Technical documentation

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Support software

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Reference designs

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TO-220 (KCS) 3 View options

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