Product details

VDS (V) -12 VGS (V) -8 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 76 Rds(on) max at VGS=2.5 V (mOhms) 105 Rds(on) max at VGS=1.8 V (mOhms) 199 Id peak (Max) (A) -22 Id max cont (A) -3.5 QG typ (nC) 1.04 QGD typ (nC) 0.15 QGS typ (nC) 0.5 VGSTH typ (V) -0.8 Package (mm) LGA 1.0x0.6mm
VDS (V) -12 VGS (V) -8 Configuration Single Rds(on) max at VGS=4.5 V (mOhms) 76 Rds(on) max at VGS=2.5 V (mOhms) 105 Rds(on) max at VGS=1.8 V (mOhms) 199 Id peak (Max) (A) -22 Id max cont (A) -3.5 QG typ (nC) 1.04 QGD typ (nC) 0.15 QGS typ (nC) 0.5 VGSTH typ (V) -0.8 Package (mm) LGA 1.0x0.6mm
  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Pb Terminal Plating
  • Halogen Free
  • RoHS Compliant
  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint (0402 Case Size)
    • 1.0 mm × 0.6 mm
  • Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >2 kV HBM
    • Rated >2 kV CDM
  • Pb Terminal Plating
  • Halogen Free
  • RoHS Compliant

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Technical documentation

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Type Title Date
* Data sheet CSD23382F4 12 V P-Channel FemtoFET MOSFET datasheet (Rev. C) 20 Oct 2014
Technical article What type of ESD protection does your MOSFET include? 22 Jun 2020
Technical article Understanding the benefits of “lead-free” power MOSFETs 08 Feb 2019
User guide Ultra-Small Footprint P-Channel FemtoFET™ MOSFET Test EVM 06 Dec 2017
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016
Technical article When to use load switches in place of discrete MOSFETs 03 Feb 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly 08 Oct 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

CSD1FPCHEVM-890 — FemtoFET P-ch Evaluation Module

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (...)

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Support software

Power Loss Calculation Tool for Load Switch

SLPC019.ZIP (338 KB)
Simulation model

CSD23382F4 Unencrypted PSpice Model (Rev. B)

SLPM120B.ZIP (4 KB) - PSpice Model
Simulation model

CSD23382F4 TINA-TI Transient Reference Design

SLPM289.TSC (1045 KB) - TINA-TI Reference Design
Simulation model

CSD23382F4 TINA-TI Transient Spice Model

SLPM290.ZIP (9 KB) - TINA-TI Spice Model
Reference designs

TIDA-00556 — Load Switch Based Ship Mode Reference Design for Wearables

The TIDA-00556 is a low power, space saving "ship mode" reference design targeted specifically for wearables and other small portable electronics that can be implemented with a simple, low cost load switch.
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