Product details


VDS (V) -20 VGS (V) -6 Configuration Dual Common Source Rds(on) max at VGS=4.5 V (mOhms) 27 Rds(on) max at VGS=2.5 V (mOhms) 39 Rds(on) max at VGS=1.8 V (mOhms) 81 Id peak (Max) (A) -24 Id max cont (A) -3.9 QG typ (nC) 2.9 QGD typ (nC) 0.4 QGS typ (nC) 0.7 VGSTH typ (V) -0.8 Package (mm) WLP 1.5x1.5 open-in-new Find other P-channel MOSFET transistors

Package | Pins | Size

DSBGA (YZF) 9 3 mm² 1.5 x 1.5 open-in-new Find other P-channel MOSFET transistors


  • Dual P-Channel MOSFETs
  • Common Source Configuration
  • Small Footprint 1.5-mm × 1.5-mm
  • Gate-Source Voltage Clamp
  • Gate ESD Protection >4 kV
    • HBM JEDEC standard JESD22-A114
  • Pb and Halogen Free
  • RoHS Compliant
open-in-new Find other P-channel MOSFET transistors


The CSD75207W15 device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications. The device has also been awarded with U.S. patents 7952145, 7420247, 7235845, and 6600182.

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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 5
Type Title Date
* Datasheet CSD75207W15 Dual P-Channel NexFET Power MOSFET datasheet (Rev. A) Jun. 12, 2014
Technical articles Understanding the benefits of “lead-free” power MOSFETs Feb. 07, 2019
Technical articles Wireless power during the zombie apocalypse Oct. 28, 2016
Technical articles When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical articles 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Design tools & simulation

Buck Converter NexFET™ Selection Tool
FETPWRCALC — This tool is designed to assist engineers in the selection of Texas Instruments’ discrete power MOSFET and Power Block devices for their synchronous buck design. Users can input the conditions for their power supply and compare various discrete and power block solutions by power loss, relative (...)
  • Vary power supply conditions and observe TI’s most efficient solutions for any set of input parameters
  • Select from a pre-established list of TI controllers or enter your own custom IC
  • Rank solutions by effective power loss and compare by relative 1k price, device package, and total PCB footprint
  • (...)

Reference designs

Indoor Light Energy Harvesting Reference Design for Bluetooth Low Energy (BLE) Beacon Subsystem
TIDA-00100 The Indoor Light Energy Harvesting Reference Design for Bluetooth Low Energy (BLE) Beacon Subsystem provides a solution where by with just the power of the typical indoor lighting in a retail environment (greater than 250 LUX) the Bluetooth Low Energy chip can broadcast BLE beacons.

This subsystem (...)

document-generic Schematic

CAD/CAE symbols

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DSBGA (YZF) 9 View options

Ordering & quality

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  • MSL rating/Peak reflow
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