Low power (as low as 3.3-µA), low voltage (up to 5.5-V) Hall effect latch


Product details


Type Latch Supply voltage (Vcc) (Min) (V) 1.65 Supply voltage (Vcc) (Max) (V) 5.5 Operate point (Max) (mT) 3.3 Release point (Min) (mT) -3.3 Output Push-pull output driver Operating temperature range (C) -40 to 85 open-in-new Find other Hall-effect latches & switches

Package | Pins | Size

X2SON (DMR) 4 2 mm² 1.4 x 1.1 open-in-new Find other Hall-effect latches & switches


  • Industry-Leading Low-Power Consumption
  • Pin-Selectable Sampling Rate:
    • SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
    • SEL = High: 2.5 kHz Using 142 µA (1.8 V)
  • 1.65- to 5.5-V Operating VCC Range
  • High Magnetic Sensitivity: ±2 mT (Typical)
  • Robust Hysteresis: 4 mT (Typical)
  • Push-Pull CMOS Output
  • Small and Thin X2SON Package
  • –40°C to +85°C Operating Temperature Range

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The DRV5012 device is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. ™

When a south magnetic pole is near the top of the package and the BOP threshold is exceeded, the device drives a low voltage. The output stays low until a north pole is applied and the BRP threshold is crossed, which causes the output to drive a high voltage. Alternating north and south poles are required to toggle the output, and integrated hysteresis separates BOP and BRP to provide robust switching.

Using an internal oscillator, the DRV5012 device samples the magnetic field and updates the output at a rate of 20 Hz or 2.5 kHz, depending on the SEL pin. This dual-bandwidth feature can allow systems to monitor changes in movement while using minimal power.

The device operates from a VCC range of 1.65 V to 5.5 V, and is packaged in a small X2SON.

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Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 7
Type Title Date
* Datasheet DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor datasheet Aug. 18, 2017
Technical articles 3 common design pitfalls when designing with Hall-effect sensors – and how to avoid them Jan. 07, 2021
User guide DRV5011-5012EVM User's Guide (Rev. A) Nov. 15, 2019
Technical articles You can be an electromechanical engineer Nov. 10, 2017
Technical articles Invisible but indispensable: The future of sensing is magnetic Nov. 08, 2017
Application note Incremental Rotary Encoder Design Considerations Sep. 27, 2017
Application note Power Gating Systems with Magnetic Sensors (Rev. A) Sep. 07, 2017

Design & development

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Hardware development

document-generic User guide
The DRV5011-5012EVM facilitates evaluation of the DRV5012 and DRV5011 Hall effect sensors. The DRV5012 is an ultra-low-power digital-latch Hall effect sensor with a pin-selectable sampling rate. The DRV5011 is an ultra-low-power digital-latch Hall effect sensor.  These sensors (...)
  • Easy evaluation and demonstration of the DRV5011 with included magnet and USB cable
  • Three of each DRV5011 and DRV5012 are provided on breakaway boards to integrate directly into a system for prototype evaluation
  • Vias are provided to attach wires to the breakaway boards
document-generic User guide
Speed up your switch, latch and linear Hall sensor prototyping and testing with the HALL-ADAPTER-EVM, which provides a fast, easy and inexpensive way to interface with small ICs. You can connect any supported Hall sensor using the included Samtec terminal strips or wire them directly to existing (...)
  • Evaluation of most Hall sensor devices from TI, including SOT-23, TO-92, X2SON, and more.
  • Standard breakout footprint for easy breadboard prototyping.
  • Magnet included.

CAD/CAE symbols

Package Pins Download
X2SON (DMR) 4 View options

Ordering & quality

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