Packaging information
| Package | Pins WQFN (RTE) | 16 |
| Operating temperature range (°C) -40 to 125 |
| Package qty | Carrier 3,000 | LARGE T&R |
Features for the DRV8213
- N-channel H-bridge brushed DC motor driver
- 1.65-V to 11-V operating supply voltage range
- 240-mΩ R DS(on) (High-Side + Low-Side)
- High output current capability: 4-A Peak
- PWM control interface, up to 100 kHz switching
- Supports 1.8-V, 3.3-V, and 5-V logic inputs
- Integrated current sensing and current regulation
- Analog current sense output ( IPROPI)
- Gain select ( GAINSEL) feature for -
- High accuracy current sensing down to 10 mA
- Optimized R DS(ON) and overcurrent limit for different current ranges
- Configurable inrush time (RTE Package only)
- Internal charge pump
- Long battery life with low-power sleep mode
- < 60 nA maximum sleep current
- Small package footprint
- Integrated protection features
- VM undervoltage lockout (UVLO)
- Auto-retry overcurrent protection (OCP)
- Thermal shutdown (TSD)
- Stall detection (RTE Package only)
Description for the DRV8213
The DRV8213 is an integrated motor driver with N-channel H-bridge, charge pump, current sense output, current regulation, and protection circuitry. The tripler charge pump allows the device to operate down to 1.65 V to accommodate 1.8-V supply rails and low-battery conditions. The charge pump integrates all capacitors and allows for 100% duty cycle operation.
An internal current mirror implements current sensing and regulation. This eliminates the need for a large power shunt resistor, saving board area and reducing system cost. The IPROPI current sense output allows a microcontroller to detect motor stall or changes in load conditions. The gain select (GAINSEL) feature allows high accuracy current sensing down to 10 mA average motor current. Using the VREF pin, this device can regulate the motor current during startup and high-load events without interaction from a microcontroller. The RTE package supports sensorless motor stall detection and reporting to microcontroller.
A low-power sleep mode achieves ultra-low quiescent current by shutting down most of the internal circuitry. Internal protection features include undervoltage lockout, overcurrent, and overtemperature.