Product details

Rating Catalog Integrated isolated power No Isolation rating Functional Number of channels 2 Forward/reverse channels 1 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 50 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
Rating Catalog Integrated isolated power No Isolation rating Functional Number of channels 2 Forward/reverse channels 1 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 50 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
VSON (REU) 8 6 mm² 3 x 2
  • Dual channel, CMOS output functional isolators
  • 50-Mbps data rate
  • Robust SiO 2 isolation barrier with ±150 kV/µs typical CMTI
  • Functional Isolation:
    • 200-V RMS, 280V DC working voltage
    • 570-V RMS, 800V DC transient voltage (60s)
  • Available in a compact 8-REU package with 2.2 mm creepage
  • Wide supply range: 1.71 V to 1.89 V and 2.25 V to 5.5 V
  • 1.71-V to 5.5-V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to +125°C
  • 1.8 mA per channel typical at 1 Mbps at 3.3 V
  • Low propagation delay: 11 ns typical at 3.3 V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (D-8) package options
  • Dual channel, CMOS output functional isolators
  • 50-Mbps data rate
  • Robust SiO 2 isolation barrier with ±150 kV/µs typical CMTI
  • Functional Isolation:
    • 200-V RMS, 280V DC working voltage
    • 570-V RMS, 800V DC transient voltage (60s)
  • Available in a compact 8-REU package with 2.2 mm creepage
  • Wide supply range: 1.71 V to 1.89 V and 2.25 V to 5.5 V
  • 1.71-V to 5.5-V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to +125°C
  • 1.8 mA per channel typical at 1 Mbps at 3.3 V
  • Low propagation delay: 11 ns typical at 3.3 V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (D-8) package options

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200V RMS / 280V DC and transient over voltages of 570V RMS / 800V DC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO 2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200V RMS / 280V DC and transient over voltages of 570V RMS / 800V DC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO 2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

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Technical documentation

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* Data sheet ISO652x General Purpose Dual-Channel Functional Isolators datasheet (Rev. A) PDF | HTML 20 Sep 2023
Application brief Understanding Functional Isolation (Rev. A) PDF | HTML 02 Jan 2024
EVM User's guide ISO652x Dual-Channel Functional Isolators Evaluation Module PDF | HTML 25 Jul 2023

Design & development

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Evaluation board

ISO6521REUEVM — ISO6521 evaluation module for dual-channel functional isolator for digital signals

ISO6521REUEVM is an evaluation module (EVM) used to evaluate the dual-channel ISO6521 functional isolator in the 8-pin DFN package. The EVM has additional footprints that gives the user flexibility to add componenents to test a variety of common applications. The EVM also features multiple test (...)

User guide: PDF | HTML
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Simulation model

ISO6521 IBIS Model

SLLM505.ZIP (81 KB) - IBIS Model
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VSON (REU) 8 View options

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