Packaging information
| Package | Pins SOIC (D) | 8 |
| Operating temperature range (°C) -40 to 125 |
| Package qty | Carrier 3,000 | LARGE T&R |
Features for the LM2103
- Drives two N-channel MOSFETs in half-bridge configuration
- 8-V typical undervoltage lockout on GVDD
- 107-V absolute maximum voltage on BST
- –19.5-V absolute maximum negative transient voltage handling on SH
- 0.5-A/0.8-A peak source/sink currents
- 475-ns typical fixed internal dead-time
- Built-in cross conduction prevention
- 115-ns typical propagation delay
- Inverting input pin INL
Description for the LM2103
The LM2103 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The INL inverting input allows the driver to be used in either dual or single PWM input applications.
The fixed dead-time and the –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The LM2103 is available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.