The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LM5111 Dual 5-A Compound Gate Driver datasheet (Rev. H) | PDF | HTML | 28 Sep 2016 |
| Application note | Why use a Gate Drive Transformer? | PDF | HTML | 04 Mar 2024 | |
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 28 Feb 2020 | ||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 28 Feb 2020 | ||
| Application note | Improving Efficiency of DC-DC Conversion through Layout | 07 May 2019 | ||
| More literature | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 29 Oct 2018 | ||
| Selection guide | Power Management Guide 2018 (Rev. R) | 25 Jun 2018 | ||
| EVM User's guide | AN-1937 LM3433 10A to 40A LED Driver Evaluation Board (Rev. D) | 03 May 2013 |
For additional terms or required resources, click any title below to view the detail page where available.
| Package | Pins | Download |
|---|---|---|
| HVSSOP (DGN) | 8 | View options |
| SOIC (D) | 8 | View options |
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