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Product details

Parameters

Number of channels (#) 1 Power switch MOSFET, GaNFET Peak output current (A) 7 Input VCC (Min) (V) 4.75 Input VCC (Max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Prop delay (ns) 2.5 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Catalog open-in-new Find other Low-side drivers

Package | Pins | Size

DSBGA (YFF) 6 0 mm² 1.295 x .895 open-in-new Find other Low-side drivers

Features

  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8 mm × 1.2 mm WCSP Package

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Description

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

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Download

Technical documentation

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARDS Download
document-generic User guide
$149.00
Description
The LMG1020EVM-006 is a small, easy-to-use power stage for LIDAR laser drive. The EVM includes an integrated resistive load, (laser not included) and takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage. The board can demonstrate (...)
Features
  • Demonstrates driver capability of 1ns pulses >50A
  • Extremely short propagation delay: 2.5ns typical, 4.5ns max
  • 210 ps typical rise/fall time
  • Schmitt-trigger type CMOS inputs for robustness
  • Advanced layout with >500pH of inductace

Design tools & simulation

SIMULATION MODELS Download
SNOM618C.ZIP (1575 KB) - PSpice Model
SIMULATION MODELS Download
SNOM619A.TSC (66 KB) - TINA-TI Reference Design
SIMULATION MODELS Download
SNOM620A.ZIP (43 KB) - TINA-TI Spice Model

Reference designs

REFERENCE DESIGNS Download
Nanosecond Laser Driver Reference Design for LiDAR
TIDA-01573 — This light distancing and ranging (LiDAR) reference design showcases the LMG1020 and LMG1025-Q1 low side gate drivers for narrow pulse applications. These devices are capable of driving a FET to produce <1.5-ns laser optical pulses in excess of 100W.
document-generic Schematic document-generic User guide

CAD/CAE symbols

Package Pins Download
DSBGA (YFF) 6 View options

Ordering & quality

Support & training

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