Product details

Number of channels (#) 1 Power switch MOSFET, GaNFET Peak output current (A) 7 Input VCC (Min) (V) 4.75 Input VCC (Max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Prop delay (ns) 2.5 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (Typ) 3.5 Driver configuration Low Side
Number of channels (#) 1 Power switch MOSFET, GaNFET Peak output current (A) 7 Input VCC (Min) (V) 4.75 Input VCC (Max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Prop delay (ns) 2.5 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (Typ) 3.5 Driver configuration Low Side
DSBGA (YFF) 6 0 mm² 1.295 x .895
  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8 mm × 1.2 mm WCSP Package
  • Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs
  • 1 ns Minimum Input Pulse Width
  • Up to 60 MHz Operation
  • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay
  • 400 ps Typical Rise and Fall Time
  • 7-A Peak Source and 5-A Peak Sink Currents
  • 5-V Supply Voltage
  • UVLO and Overtemperature Protection
  • 0.8 mm × 1.2 mm WCSP Package

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

The LMG1020 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low side drivers. The design simplicity of the LMG1020 enables extremely fast propagation delays of 2.5 nanoseconds and minimum pulse width of 1 nanosecond. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

0.8-mm × 1.2-mm WCSP package of LMG1020 minimizes gate loop inductance and maximizes power density in high-frequency applications.

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Technical documentation

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Type Title Date
* Data sheet LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width Applications datasheet (Rev. B) 16 Oct 2018
User guide Using the LMG1020-EVM Nano-second LiDAR EVM (Rev. C) 08 May 2020
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mar 2020
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
E-book E-book: An engineer’s guide to industrial robot designs 12 Feb 2020
Application note GaN Gate Driver Layout Help 23 May 2019
Technical article 5 ways TI’s tiny devices deliver huge innovations to engineers 08 Nov 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG1020EVM-006 — LMG1020 GaN Low-side Driver + GaN FET LiDAR Evaluation Module

The LMG1020EVM-006 is a small, easy-to-use power stage for LIDAR laser drive. The EVM includes an integrated resistive load, (laser not included) and takes a short-pulse input that can either be buffered (and shortened further), or passed directly to the power stage. The board can demonstrate (...)
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Simulation model

LMG1020 PSpice Transient Model (Rev. C)

SNOM618C.ZIP (1575 KB) - PSpice Model
Simulation model

LMG1020 TINA-TI Reference Design (Rev. A)

SNOM619A.TSC (66 KB) - TINA-TI Reference Design
Simulation model

LMG1020 TINA-TI Transient Spice Model (Rev. A)

SNOM620A.ZIP (43 KB) - TINA-TI Spice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

TIDA-01573 — Nanosecond Laser Driver Reference Design for LiDAR

This light distancing and ranging (LiDAR) reference design showcases the LMG1020 and LMG1025-Q1 low side gate drivers for narrow pulse applications. These devices are capable of driving a FET to produce <1.5-ns laser optical pulses in excess of 100W.
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DSBGA (YFF) 6 View options

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