Product details

Bus voltage (Max) (V) 300 Power switch MOSFET, GaNFET Input VCC (Min) (V) 6 Input VCC (Max) (V) 18 Peak output current (A) 3 Rise time (ns) 0.5 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 4 Rating Catalog Number of channels (#) 2 Fall time (ns) 0.5 Prop delay (ns) 10 Iq (uA) 300 Input threshold TTL Channel input logic TTL/PWM Features Resistor-controllable deadtime, Internal LDO, Bootstrap supply voltage clamp Driver configuration Half Bridge
Bus voltage (Max) (V) 300 Power switch MOSFET, GaNFET Input VCC (Min) (V) 6 Input VCC (Max) (V) 18 Peak output current (A) 3 Rise time (ns) 0.5 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 4 Rating Catalog Number of channels (#) 2 Fall time (ns) 0.5 Prop delay (ns) 10 Iq (uA) 300 Input threshold TTL Channel input logic TTL/PWM Features Resistor-controllable deadtime, Internal LDO, Bootstrap supply voltage clamp Driver configuration Half Bridge
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package
  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent input mode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-V regardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designer to choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internal switch turns the bootstrap diode off when the low side is off, effectively preventing the high-side bootstrap from overcharging and minimizing the reverse recovery charge. Additional parasitic capacitance across the GaN FET is minimized to less than 1 pF to reduce additional switching losses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode. In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the two complementary output signals are generated from a single input and the user can adjust the dead time from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°C to 125°C and is offered in a low-inductance WQFN package.

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Technical documentation

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Type Title Date
* Data sheet LMG1210 200-V, 1.5-A, 3-A half-bridge MOSFET and GaN FET driver with adjustable dead time for applications up to 50 MHz datasheet (Rev. D) PDF | HTML 07 Feb 2019
Application note GaN Applications PDF | HTML 10 Aug 2022
Application note Key Parameters and Driving Requirements of GaN FETs PDF | HTML 04 Aug 2022
Application note Nomenclature, Types, and Structure of GaN Transistors PDF | HTML 04 Aug 2022
Application note How GaN Enables More Efficient and Reduced Form Factor Power Supplies PDF | HTML 02 Aug 2022
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application note How to Optimize RF Amplifier Performance Using LMG1210 03 Oct 2019
Application note Achieve Cooler Thermals and Loss of your GaN Half-Bridge with the LMG1210 23 May 2019
Application note GaN Gate Driver Layout Help 23 May 2019
Application note Get the Most Power from a Half-bridge with High-Frequency Controllable Precision 05 Dec 2018
Application note Optimizing efficiency through dead time control with the LMG1210 GaN driver (Rev. A) 27 Nov 2018
White paper Optimizing multi-megahertz GaN driver design white paper (Rev. A) 27 Nov 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article The sound of GaN 26 Jun 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
EVM User's guide Using the LMG1210EVM-012 300 V Half-Bridge Driver for GaN 29 Jan 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG1210EVM-012 — LMG1210 Half-bridge Open Loop Evaluation Module

The LMG1210EVM-012 is designed to evaluate the LMG1210 Megahertz 200V half-bridge driver for GaN FETs. This EVM consists on two Gallium Nitride FETs configured in a half-bridge, driven by a single LMG1210. No controller is present on the board.
User guide: PDF
Not available on TI.com
Simulation model

LMG1210 PSpice Transient Model (Rev. C)

SNOM615C.ZIP (22427 KB) - PSpice Model
Simulation model

LMG1210 TINA-TI Reference Design (Rev. C)

SNOM617C.TSC (610 KB) - TINA-TI Reference Design
Simulation model

LMG1210 Unencrypted PSPICE Transient Model

SNOM677.ZIP (7 KB) - PSpice Model
CAD/CAE symbol

LMG1210 Altium Deisgn Files

SNOR026.ZIP (3265 KB)
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP21440 — Comparison: 0.8V/8W GaN vs Silicon Power Supply Reference Design

This reference design provides customers with a comparison study on the usage of GaN vs SI in power supply designs. This specific design uses TPS40400 controller to drive CSD87381 for the silicon power supply and LMG1210 with EPC2111 for the GaN power supply to provide 0.8V/10A. This design (...)
Test report: PDF
Schematic: PDF
Reference designs

TIDA-01634 — Multi-MHz GaN Power Stage Reference Design for High-Speed DC/DC Converters

This reference design implements a multi-MHz power stage design based on the LMG1210 half-bridge GaN driver and GaN power High Electron Mobility Transistors (HEMTs). With highly efficient switches and flexible dead-time adjustment, this design can significantly improve power density while (...)
Design guide: PDF
Schematic: PDF
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