Product details

RDS (on) (Milliohm) 50 VDS (Max) (V) 600 ID (Max) (A) 12 Rating Catalog
RDS (on) (Milliohm) 50 VDS (Max) (V) 600 ID (Max) (A) 12 Rating Catalog
VQFN (RWH) 32
  • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
  • Enables high density power conversion designs
    • Superior system performance over cascode or stand-alone GaN FETs
    • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
    • Adjustable drive strength for switching performance and EMI control
    • Digital fault status output signal
    • Only +12 V unregulated supply needed
  • Integrated gate driver
    • Zero common source inductance
    • 20 ns Propagation delay for MHz operation
    • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
    • 25 to 100V/ns User adjustable slew rate
  • Robust protection
    • Requires no external protection components
    • Overcurrent protection with less than 100 ns response
    • Greater than 150 V/ns Slew rate immunity
    • Transient overvoltage immunity
    • Overtemperature protection
    • Under voltage lock out (UVLO) Protection on all supply rails
  • Robust protection
    • LMG3410R050: Latched overcurrent protection
    • LMG3411R050: Cycle-by-cycle overcurrent protection
    • TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
    • Enables high density power conversion designs
      • Superior system performance over cascode or stand-alone GaN FETs
      • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
      • Adjustable drive strength for switching performance and EMI control
      • Digital fault status output signal
      • Only +12 V unregulated supply needed
    • Integrated gate driver
      • Zero common source inductance
      • 20 ns Propagation delay for MHz operation
      • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
      • 25 to 100V/ns User adjustable slew rate
    • Robust protection
      • Requires no external protection components
      • Overcurrent protection with less than 100 ns response
      • Greater than 150 V/ns Slew rate immunity
      • Transient overvoltage immunity
      • Overtemperature protection
      • Under voltage lock out (UVLO) Protection on all supply rails
    • Robust protection
      • LMG3410R050: Latched overcurrent protection
      • LMG3411R050: Cycle-by-cycle overcurrent protection

      The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

      The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

      The LMG341xR050 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

      The LMG341xR050 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100 V/ns switching with near zero Vds ringing, less than 100 ns current limiting response self-protects against unintended shoot-through events, overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

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      Get started with your GaN design today with the LMG3410R050 development kit:

      Technical documentation

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      Type Title Date
      * Data sheet LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection datasheet (Rev. B) 16 Jan 2020
      White paper Achieving GaN Products With Lifetime Reliability 02 Jun 2021
      White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
      White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU,實現功率密集與有效率的數位電源系統 18 Mar 2021
      White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
      White paper Achieving High Efficiency and Enabling Integration in EV Powertrain Subsystems 18 Nov 2020
      More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET 20 Oct 2020
      Analog design journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020
      Application note Thermal Considerations for Designing a GaN Power Stage (Rev. B) 04 Aug 2020
      More literature GaN FET Reliability to Power-line Surges Under Use-conditions 25 Mar 2019
      User guide Using the LMG341xEVM-018 Half-bridge and LMG34XX-BB--EVM breakout board EVM (Rev. A) 08 Mar 2019
      Technical article 20 million GaN reliability hours and counting 28 Feb 2019
      Application note Third quadrant operation of GaN 25 Feb 2019
      Technical article Gallium nitride: supporting applications from watts to kilowatts 19 Dec 2018
      Technical article 20 million reasons to use GaN 08 Nov 2018
      Application note Overcurrent Protection in High-Density GaN Power Designs 19 Oct 2018
      More literature Product-level Reliability of GaN Devices 26 Apr 2016
      White paper Application-Relevant Qualification of Emerging Semiconductor Power Devices, GaN 31 Mar 2016

      Design & development

      For additional terms or required resources, click any title below to view the detail page where available.

      Evaluation board

      LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family

      The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)

      In stock
      Limit: 3
      Daughter card

      LMG3410EVM-018 — LMG3410R050 600-V 50-mΩ GaN half-bridge daughter card

      LMG3410EVM-018 configures two LMG3410R050 600-V GaN FETs with Integrated driver and protection, in a half bridge. This EVM comes with all the necessary auxiliary peripheral circuitry, and is designed to work in conjunction with larger systems.
      In stock
      Limit: 4
      Simulation model

      LMG3410R050 Unencrypted PSpice Model (Rev. A)

      SNOM689A.ZIP (44 KB) - PSpice Model
      Simulation tool

      PSPICE-FOR-TI — PSpice® for TI design and simulation tool

      PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
      Reference designs

      TIDA-010210 — 6.6-kW three-phase, three-level ANPC inverter/PFC bidirectional power stage reference design

      This reference design provides a design template for implementing a three-level, three-phase, silicon carbide/gallium nitride (SiC/GaN) based ANPC inverter power stage. The use of fast-switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of (...)
      Reference designs

      PMP40690 — 4-kW interleaved CCM totem pole bridgeless PFC reference design using C2000™ MCU and GaN

      This reference design is a 4-kW interleaved CCM totem pole (TTPL) bridgeless PFC reference design using a 64-pin C2000™ microcontroller, LM3410 gallium nitride device and TMCS1100 hall sensor. It is based on TIDM-02008 bidirectional interleaved CCM TTPL bridgeless PFC reference (...)
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