Product details

RDS (on) (Milliohm) 70 VDS (Max) (V) 600 ID (Max) (A) 12 Rating Catalog
RDS (on) (Milliohm) 70 VDS (Max) (V) 600 ID (Max) (A) 12 Rating Catalog
VQFN (RWH) 32
  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMI Control
    • Digital Fault Status Output Signal
    • Only +12 V Unregulated Supply Needed
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable Slew Rate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/ns Slew Rate Immunity
    • Transient Overvoltage Immunity
    • Overtemperature Protection
    • UVLO Protection on All Supply Rails
  • Device Options:
    • LMG3410R070: Latched Overcurrent Protection
    • LMG3411R070: Cycle-by-cycle Overcurrent Protection
  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMI Control
    • Digital Fault Status Output Signal
    • Only +12 V Unregulated Supply Needed
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable Slew Rate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/ns Slew Rate Immunity
    • Transient Overvoltage Immunity
    • Overtemperature Protection
    • UVLO Protection on All Supply Rails
  • Device Options:
    • LMG3410R070: Latched Overcurrent Protection
    • LMG3411R070: Cycle-by-cycle Overcurrent Protection

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

The LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341x’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply. Integrated gate drive enables 100V/ns switching with near zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-through events, Overtemperature shutdown prevents thermal runaway, and system interface signals provide self-monitoring capability.

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Technical documentation

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Type Title Date
* Data sheet LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection datasheet (Rev. F) 06 Apr 2020
Technical article 3 quiescent-current (Iq) specifications you need to understand 12 Nov 2021
White paper Achieving GaN Products With Lifetime Reliability 02 Jun 2021
White paper 為太陽能電網增添儲能功能的四項 重要設計考量 05 May 2021
White paper Four key design considerations when adding energy storage to solar power grids 22 Mar 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU,實現功率密集與有效率的數位電源系統 18 Mar 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET 20 Oct 2020
Analog design journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020
Application note Thermal Considerations for Designing a GaN Power Stage (Rev. B) 04 Aug 2020
Technical article Designing highly efficient, powerful and fast EV charging stations 06 Aug 2019
Technical article No avalanche? No problem! GaN FETs are surge robust 03 Apr 2019
More literature GaN FET Reliability to Power-line Surges Under Use-conditions 25 Mar 2019
Technical article 20 million GaN reliability hours and counting 28 Feb 2019
Application note Third quadrant operation of GaN 25 Feb 2019
White paper Direct-drive configuration for GaN devices (Rev. A) 19 Nov 2018
Application note High Voltage Half Bridge Design Guide for LMG3410 Smart GaN FET (Rev. A) 10 Nov 2018
Application note Overcurrent Protection in High-Density GaN Power Designs 19 Oct 2018
User guide Using the LMG3410-HB-EVM Half-Bridge and LMG34XX-BB-EVM Breakout Board EVM (Rev. A) 03 May 2017
White paper Enabling high-voltage power delivery through the power process chain 23 Mar 2017
More literature Product-level Reliability of GaN Devices 26 Apr 2016
White paper Application-Relevant Qualification of Emerging Semiconductor Power Devices, GaN 31 Mar 2016
White paper Optimizing GaN performance with an integrated driver 24 Feb 2016
White paper Redefining power management through high-voltage innovation 12 Nov 2015
White paper GaN FET-Based CCM Totem-Pole Bridgeless PFC 02 Oct 2015
White paper A comprehensive methodology to qualify the reliability of GaN products 02 Mar 2015
White paper Advancing Power Supply Solutions Through the Promise of GaN 24 Feb 2015

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG34XX-BB-EVM — LMG34xx GaN system-level evaluation motherboard for LMG341x Family

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG341x half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)

In stock
Limit: 3
Daughter card

LMG3410-HB-EVM — LMG3410R070 600-V 70-mΩ GaN half-bridge daughter card

The LMG34XX-BB-EVM is an easy to use breakout board to configure any LMG34XX half bridge board, such as the LMG3410-HB-EVM, as a synchronous buck converter.  By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. (...)
In stock
Limit: 30
Simulation model

LMG3410R070 Unencrypted PSpice Model (Rev. D)

SNOM593D.ZIP (57 KB) - PSpice Model
Simulation model

LMG3410 TINA-TI Spice Model (Rev. B)

SNOM608B.TSC (158 KB) - TINA-TI Spice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
CAD/CAE symbol

LMG3410 Daughter Card EVM Design Files (Rev. A)

SNOR009A.ZIP (10151 KB)
CAD/CAE symbol

LMG34xx Mother Board EVM Design Files

SNOR010.ZIP (4044 KB)
Reference designs

TIDM-1007 — High efficiency GaN CCM totem pole bridgeless Power Factor Correction (PFC) reference design

Interleaved Continuous Conduction Mode (CCM) Totem Pole (TTPL) Bridgeless Power Factor Correction (PFC) is an attractive power topology with use of high band-gap GaN devices, because of high efficiency and reduced size of the power supply. This design illustrates a method to control this power (...)
Reference designs

TIDA-010062 — 1-kW, 80 Plus titanium, GaN CCM totem pole bridgeless PFC and half-bridge LLC reference design

This reference design is a digitally controlled, compact 1-kW AC/DC power supply design for server power supply unit (PSU) and telecom rectifier applications. The highly efficient design supports two main power stages, including a front-end continuous conduction (...)
Reference designs

TIDM-02008 — Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU

This reference design is a 3.-kW bidirectional interleaved continuous conduction mode (CCM) totem-pole (TTPL) bridgeless power factor correction (PFC) power stage using a C2000™ real-time controller and LMG3410R070 gallium nitride (GaN) with integrated driver and protection. (...)
Reference designs

PMP20873 — 99% Efficient 1kW GaN-based CCM Totem-pole Power Factor Correction (PFC) Converter Reference Design

Continuous-Conduction-Mode (CCM) Totem-pole power factor correction (PFC) is a simple but efficient power converter.  To achieve 99% efficiency, there are many design details that need to be taken into account.  The PMP20873 reference design uses TI’s 600VGaN  power stage, (...)
Reference designs

PMP20289 — 400V – 12V/500W High Frequency Resonant Converter Reference Design Using High Voltage GaN Devices

The PMP20289 was built and tested to verify the performance of a high frequency (>400kHz nominal switching frequency) LLC series resonant converter (LLC-SRC) implemented with Texas Instrument’s high voltage GaN FETs under nominal (390V to 12V) voltage conversion. The digital controller (...)
Reference designs

PMP20637 — High Efficiency and High Power Density 1kW Resonant Converter Reference Design with TI HV GaN FET

This reference design is a high efficiency, high power density and light weight resonant converter reference design. It converts a 390V input to a 48V/1kW output. The PMP20637 power stage has over 140W/in^3 power density. The whole board weight is less than 210g. With fixed 950kHz switching (...)
Reference designs

PMP21309 — 24-V/500-W resonant converter reference design with HV GaN FET

This reference design is a high-frequency resonant converter reference design. The output voltage is regulated to 24 V with input voltage ranges from 380 V to 400 V using a resonant tank with 500 kHz resonant frequency. A 97.9% peak efficiency is achieved with this design using TI’s (...)
Reference designs

PMP21842 — 12-V/500-W resonant converter reference design with HV GaN FET

This high-frequency resonant converter reference design regulates a 12-V output from a 380-V to 400-V input voltage range using a resonant tank with 500 kHz resonant frequency. A peak efficiency of 96.0% (bias supply included) is achieved with this design using our high-voltage GaN device along (...)
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VQFN (RWH) 32 View options

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