Product details


RDS (on) (Milliohm) 30 VDS (Max) (V) 600 Rating Catalog open-in-new Find other Gallium nitride (GaN) ICs


  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3425R030

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open-in-new Find other Gallium nitride (GaN) ICs


The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

open-in-new Find other Gallium nitride (GaN) ICs
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NEW LMG3425R030 PREVIEW 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode Same on-resistance with ideal diode mode functionality
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NEW LMG3422R050 PREVIEW 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting Same functionality with different on-resistance

Technical documentation

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Type Title Date
* Datasheet LMG342xR030 600-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temp datasheet (Rev. A) Oct. 28, 2020
Technical articles How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs Nov. 17, 2020
User guide LMG342XEVM-04X User Guide Oct. 26, 2020
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET Oct. 20, 2020
Application note Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage Sep. 29, 2020

Design & development

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Hardware development

document-generic User guide
The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG342XR0XX
  • Single/Dual PWM input on board for PWM signal with variable dead time
  • Latched over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that (...)
document-generic User guide
LMG3422EVM-043 configures two LMG3422R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG342XR0XX
  • Single/Dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes (...)

Design tools & simulation

SNOM704.ZIP (12 KB) - PSpice Model
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PSPICE-FOR-TI — PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
  • Leverages Cadence PSpice Technology
  • Preinstalled library with a suite of digital models to enable worst-case timing analysis
  • Dynamic updates ensure you have access to most current device models
  • Optimized for simulation speed without loss of accuracy
  • Supports simultaneous analysis of multiple products
  • (...)

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