LMG3425EVM-043 LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card angled board image

LMG3425EVM-043

LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card

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Features for the LMG3425EVM-043

  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG342XR0XX
  • Single/Dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

Description for the LMG3425EVM-043

LMG3425EVM-043 configures two LMG3425R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.

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