Product details

RDS (on) (Milliohm) 30 VDS (Max) (V) 600 ID (Max) (A) 55 Rating Catalog
RDS (on) (Milliohm) 30 VDS (Max) (V) 600 ID (Max) (A) 55 Rating Catalog
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3425R030
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3425R030

The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

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Technical documentation

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Type Title Date
* Data sheet LMG342xR030 600-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) 16 Mar 2021
Technical article 3 quiescent-current (Iq) specifications you need to understand 12 Nov 2021
White paper Achieving GaN Products With Lifetime Reliability 02 Jun 2021
White paper 為太陽能電網增添儲能功能的四項 重要設計考量 05 May 2021
White paper Four key design considerations when adding energy storage to solar power grids 22 Mar 2021
White paper TI GaN FET와 C2000™ 실시간 MCU를 결합하여 전력 밀도가 높고 효율적인 전원 시스템 달성 18 Mar 2021
White paper 結合 TI GaN FETs 與 C2000™ 即時 MCU,實現功率密集與有效率的數位電源系統 18 Mar 2021
White paper Achieve Power-Dense and Efficient Digital Power Systems by Combining TI GaN FETs 05 Jan 2021
Technical article Get more from your GaN-based digital power designs with a C2000 real-time MCU 17 Dec 2020
Application note Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A) 19 Nov 2020
Technical article How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs 17 Nov 2020
Application note Maximizing the Performance of GaN with Ideal Diode Mode 30 Oct 2020
User guide LMG342XEVM-04X User Guide 26 Oct 2020
More literature A Generalized Approach to Determine the Switching Lifetime of a GaN FET 20 Oct 2020
Analog design journal Wide-bandgap semiconductors: Performance and benefits of GaN versus SiC 22 Sep 2020

Design & development

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Evaluation board

LMG342X-BB-EVM — LMG342x GaN system-level evaluation motherboard for LMG342x Family

The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM (...)
In stock
Limit: 5
Daughter card

LMG3425EVM-043 — LMG3425R030 600-V 30-mΩ with ideal diode mode half-bridge daughter card

LMG3425EVM-043 configures two LMG3425R030 GaN FETs in a half-bridge with the latched over current protection function and all the necessary auxiliary peripheral circuitry.  This EVM is designed to work in conjunction with larger systems.
In stock
Limit: 5
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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