LMG3525R030-Q1

PREVIEW

Product details

VDS (Max) (V) 650 RDS (on) (Milliohm) 30 ID (Max) (A) 55 Rating Automotive
VDS (Max) (V) 650 RDS (on) (Milliohm) 30 ID (Max) (A) 55 Rating Automotive
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40 °C To +125 °C, TJ
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 650-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3525R030-Q1
  • Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40 °C To +125 °C, TJ
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 650-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3525R030-Q1
  • Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance

The LMG352xR030-Q1 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG352xR030-Q1 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

The LMG352xR030-Q1 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG352xR030-Q1 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

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Same functionality with different pin-out to the compared device.
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Technical documentation

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Type Title Date
* Data sheet LMG352xR030-Q1 650-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) PDF | HTML 10 Jun 2021
EVM User's guide LMG352XEVM-04X EVM User's Guide (Rev. A) 03 Feb 2021
Technical article Automotive GaN FETs engineered for high frequency and robustness in HEV/EVs 30 Nov 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG342X-BB-EVM — LMG342x GaN system-level evaluation motherboard for LMG342x Family

The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM (...)
User guide: PDF | HTML
Not available on TI.com
Daughter card

LMG3525EVM-042 — LMG3525R030-Q1 daughtercard for automotive 650-V 30-mΩ FET with ideal diode mode half-bridge

LMG3525EVM-042 configures two LMG3525R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

Not available on TI.com
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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