Automotive 650-V 30-mΩ GaN FET with integrated driver, protection, temp. reporting, ideal diode mode



Product details


RDS (on) (Milliohm) 30 VDS (Max) (V) 650 ID (Max) (A) 55 Rating Automotive open-in-new Find other Gallium nitride (GaN) ICs


  • AEC-Q100 qualified for automotive applications
    • Temperature grade 1: –40 °C To +125 °C, TJ
  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 650-V GaN-on-Si FET with Integrated gate driver
    • Integrated high precision gate bias voltage
    • 200-V/ns CMTI
    • 2.2-MHz switching frequency
    • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
    • Operates from +12-V unregulated supply
  • Robust protection
    • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
    • Withstands 720-V surge while hard-switching
    • Self-protection from internal overtemperature and UVLO monitoring
  • Advanced power management
    • Digital temperature PWM output
    • Ideal diode mode reduces third-quadrant losses in LMG3525R030-Q1
  • Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
open-in-new Find other Gallium nitride (GaN) ICs


The LMG352xR030-Q1 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG352xR030-Q1 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.

open-in-new Find other Gallium nitride (GaN) ICs
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Same functionality with different pin-out to the compared device.
NEW LMG3425R030 PREVIEW 600-V 30-mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode Industrial grade, same on-resistance with bottom-side cooling and lower voltage rating
Similar functionality to the compared device.
NEW LMG3522R030-Q1 PREVIEW Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting Same on-resistance without ideal diode mode functionality

Technical documentation

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Type Title Date
* Data sheet LMG352xR030-Q1 650-V 30-mΩ GaN FET with Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. B) Jun. 10, 2021
User guide LMG352XEVM-04X EVM User's Guide (Rev. A) Feb. 03, 2021
Technical article Automotive GaN FETs engineered for high frequency and robustness in HEV/EVs Nov. 30, 2020

Design & development

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Hardware development

document-generic User guide
The LMG342X-BB-EVM is an easy to use breakout board to configure any LMG342xR0x0 half bridge boards, such as the LMG3422EVM-043, as a synchronous buck converter. By providing a power stage, bias power and logic circuitry this EVM allows for quick measurements of the GaN device switching. This EVM is (...)
  • Input voltage operates up to 600 V
  • Simple open loop design to evaluate performance of LMG342XR0XX
  • Single/Dual PWM input on board for PWM signal with variable dead time
  • Latched over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that (...)
document-generic User guide

LMG3525EVM-042 configures two LMG3525R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.

  • Input voltage operates up to 650 V
  • Simple open loop design to evaluate performance of LMG3525R030-Q1
  • Single/dual PWM input on board for PWM signal with variable dead time
  • Cycle-by-cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope (...)

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  • Leverages Cadence PSpice Technology
  • Preinstalled library with a suite of digital models to enable worst-case timing analysis
  • Dynamic updates ensure you have access to most current device models
  • Optimized for simulation speed without loss of accuracy
  • Supports simultaneous analysis of multiple products
  • (...)

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