LMG3526R030
650-V 30-mΩ GaN FET with integrated driver, protection and zero-voltage detection
LMG3526R030
- 650-V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns FET hold-off
- 2-MHz switching frequency
- 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5-V to 18-V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
- Zero-voltage detection feature that facilitates soft-switching converters
The LMG3526R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3526R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TIs low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced features include digital temperature reporting, fault detection, and zero-voltage detection (ZVD). The temperature of the GaN FET is reported through a variable duty cycle PWM output. Faults reported include overtemperature, overcurrent, and UVLO monitoring. ZVD feature can provide a pulse output from ZVD pin when zero-voltage switching (ZVS) is realized.
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Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | LMG3526R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet (Rev. A) | PDF | HTML | 27 Apr 2023 |
Technical article | GaN 開關整合如何在 PFC 中實現低 THD 與高效率 | PDF | HTML | 21 Mar 2024 | |
Technical article | GaN 스위치 통합으로 PFC에서 낮은 THD와 높은 효율성을 구현하 는 방법 | PDF | HTML | 21 Mar 2024 | |
Technical article | How GaN switch integration enables low THD and high efficiency in PFC | PDF | HTML | 21 Feb 2024 | |
White paper | Achieving GaN Products With Lifetime Reliability | PDF | HTML | 02 Jun 2021 | |
Application note | Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package | 05 Mar 2021 |
Design & development
For additional terms or required resources, click any title below to view the detail page where available.
LMG342X-BB-EVM — LMG342x GaN system-level evaluation motherboard for LMG342x Family
LMG3522EVM-042 — LMG3522R030-Q1 automotive 650-V 30-mΩ GaN FET with integrated driver daughter card
LMG3522EVM-042 configures two LMG3522R030 GaN FETs in a half bridge with the cycle-by-cycle over current protection, latched short circuit protection function and all the necessary auxiliary peripheral circuitry. This EVM is designed to work in conjunction with larger systems.
SNOR029 — GaN CCM Boost PFC Power Loss Calculation Excel Sheet
Supported products & hardware
Products
Gallium nitride (GaN) power stages
SNOR030 — GaN CCM Totem Pole PFC Power Loss Calculation Excel Sheet
Supported products & hardware
Products
Gallium nitride (GaN) power stages
PMP40988 — Variable-frequency, ZVS, 5-kW, GaN-based, two-phase totem-pole PFC reference design
Package | Pins | Download |
---|---|---|
VQFN (RQS) | 52 | View options |
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