NEW

LMG3616

ACTIVE

650-V 270-mΩ GaN FET with integrated driver and protection

Product details

VDS (max) (V) 650 RDS(on) (mΩ) 270 ID (max) (A) 3.6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VDS (max) (V) 650 RDS(on) (mΩ) 270 ID (max) (A) 3.6 Features Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage Rating Catalog Operating temperature range (°C) -40 to 125
VQFN (REQ) 38 42.4 mm² 8 x 5.3
  • 650-V 270-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad
  • 650-V 270-mΩ GaN power FET
  • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
  • Overtemperature protection with FLT pin reporting
  • AUX quiescent current: 55 µA
  • Maximum supply and input logic pin voltage: 26 V
  • 8 mm × 5.3 mm QFN package with thermal pad

The LMG3616 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3616 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3616 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

The LMG3616 is a 650-V 270-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3616 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.

Programmable turn-on slew rates provide EMI and ringing control.

The LMG3616 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.

Download View video with transcript Video

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 1
Type Title Date
* Data sheet LMG3616650-V270-mΩ GaN FET With Integrated Driver datasheet PDF | HTML 14 Nov 2023

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

LMG3626EVM-074 — LMG3626 evaluation module for 65-W quasi-resonant flyback converter with USB type-C® PD

The LMG3626EVM-074 evaluation module (EVM) demonstrates high-efficiency and high-density for a 65-W USB Type-C® power delivery (PD) off-line adapter using the LMG3626 integrated GaN FET with current-sense emulation. The input supports a universal 90 Vac to 265 Vac and the single output can be (...)

User guide: PDF | HTML
Calculation tool

LMG36XX-CALC LMG36XX Quasi-Resonant Flyback Power Stage Design Calculator

The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use LMG36XX integrated GaN FET. Calculations are provided for frequency, voltage/current stresses, and losses in converter.
Supported products & hardware

Supported products & hardware

Products
Gallium nitride (GaN) ICs
LMG3622 650-V 120-mΩ GaN FET with integrated driver, protection and current sense emulation LMG3624 650-V 170-mΩ GaN FET with integrated driver, protection and current sense emulation LMG3626 650-V 270-mΩ GaN FET with integrated driver, protection and current-sense emulation LMG3612 650-V 120-mΩ GaN FET with integrated driver and protection LMG3616 650-V 270-mΩ GaN FET with integrated driver and protection
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Package Pins Download
VQFN (REQ) 38 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos