Packaging information
| Package | Pins TSSOP (PW) | 16 |
| Operating temperature range (°C) -55 to 125 |
| Package qty | Carrier 90 | TUBE |
Features for the SN65C1168E-SEP
- VID V62/19606
- Radiation hardened
- Single event latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C
- ELDRS-free to 30 krad(Si)
- Total ionizing dose (TID) RLAT for every wafer lot up to 20 krad(Si)
- Space Enhanced
Plastic
- Controlled baseline
- Gold wire
- NiPdAu lead finish
- One assembly and test site
- One fabrication site
- Available in military (–55°C to 125°C) temperature range
- Extended product life cycle
- Extended product-change notification
- Product traceability
- Enhanced mold compound for low outgassing
- Meet or exceed standards TIA/EIA-422-B and ITU recommendation V.11
- Operate from single 5-V power supply
- ESD protection for RS-422 bus pins
- ±12-kV human-body model (HBM)
- ±8-kV IEC 61000-4-2, contact discharge
- ±8-kV IEC 61000-4-2, air-gap discharge
- Low-pulse skew
- Receiver input impedance . . . 17 kΩ (typical)
- Receiver input sensitivity . . . ±200 mV
- Receiver common-mode input voltage range of
–7 V to 7 V - Glitch-free power-up/power-down protection
Description for the SN65C1168E-SEP
The SN65C1168E-SEP consists of dual drivers and dual receivers with ±12-kV ESD (HBM) and ±8-kV ESD (IEC61000-4-2 Air-Gap Discharge and Contact Discharge) for RS-422 bus pins. The device meets the requirements of TIA/EIA-422-B and ITU recommendation V.11. Some parameters do not meet all TIA/EIA-422-B and ITU recommendation V.11 requirements after 20-krad(Si) TID exposure.
The SN65C1168E-SEP drivers have individual active-high enables.