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Parameters

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Package | Pins | Size

SOIC (D) 8 19 mm² 4.9 x 3.9 TSSOP (PW) 8 19 mm² 3 x 6.4 open-in-new Find other P-channel MOSFETs

Features

  • Low rDS(on) . . . 0.18 Typ at VGS = -10 V
  • 3 V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • Available in Ultrathin TSSOP Package (PW)
  • ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015

LinBICMOS is a trademark of Texas Instruments Incorporated

open-in-new Find other P-channel MOSFETs

Description

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.

Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

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Technical documentation

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Type Title Date
* Data sheet Single P-Channel Enhancement-Mode MOSFETs datasheet (Rev. C) Aug. 01, 1995
Technical article Understanding the benefits of “lead-free” power MOSFETs Feb. 08, 2019
Technical article When to use load switches in place of discrete MOSFETs Feb. 03, 2016
Technical article 48V systems: Driving power MOSFETs efficiently and robustly Oct. 08, 2015

Design & development

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CAD/CAE symbols

Package Pins Download
SOIC (D) 8 View options
TSSOP (PW) 8 View options

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