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TPS7H6101-SEP

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Radiation-tolerant 200V 10A GaN power stage with integrated driver

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Data sheet

TPS7H6101-SEP

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Data sheet Order now

Product details

VDS (max) (V) 200 RDS(on) (mΩ) 250 Features Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection Rating Space Operating temperature range (°C) -55 to 125
VDS (max) (V) 200 RDS(on) (mΩ) 250 Features Dual LDO, Half-bridge, High or low-side configurable, Overtemperature protection Rating Space Operating temperature range (°C) -55 to 125
UNKNOWN (NPR) 64 See data sheet
  • Radiation performance:
    • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
    • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V e-mode GaN FET half bridge
    • 15mΩRDS(ON) (typ)
    • 100kHz to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation
  • Radiation performance:
    • Radiation lot acceptance tested (RLAT) to total ionizing dose (TID) of 50krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 43MeV-cm2/mg
    • Single-event transient (SET) and single-event fault interrupt (SEFI) characterized up to (LET) = 43MeV-cm2/mg
  • 200V e-mode GaN FET half bridge
    • 15mΩRDS(ON) (typ)
    • 100kHz to 2MHz operation
  • LGA package:
    • Thermally optimized 12mm × 9mm LGA package with thermal pads
    • Integrated gate drive resistors
    • Low common source inductance packaging
    • Electrically isolated high-side and low-side
  • Flexible control for various half-bridge and two switch power supply topologies
    • Low propagation delay
    • Two operational modes
      • Single PWM input with adjustable dead time
      • Two independent inputs
    • Programmable dead time control
    • Selectable input interlock protection in independent input mode
    • 5V gate drive supply for robust FET operation

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver; integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

The TPS7H6101 is a radiation-tolerant 200V e-mode GaN power-FET half bridge with integrated gate driver; integration of the e-mode GaN FETs and gate driver simplifies design, reduces component count, and reduces board space. Support for half-bridge and two independent switch topologies, configurable dead time, and configurable shoot through interlock protection facilitates support for a wide variety of applications and implementations.

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Technical documentation

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Type Title Date
* Data sheet TPS7H6101-SEP 200V, 10A GaN Half Bridge Power Stage datasheet PDF | HTML 14 May 2025
* Radiation & reliability report TPS7H6101-SEP Preliminary Total Ionizing Dose (TID) Report 09 May 2025
Certificate TPS7H6101EVM EU Declaration of Conformity (DoC) 16 Apr 2025

Design & development

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Evaluation board

TPS7H6101EVM — TPS7H6101-SEP evaluation module

The TPS7H6101EVM uses an input voltage rail on J13 to power the PVIN of 100V. By default, the device runs PWM mode and IIM mode can be used with minimal changes. Inputting a 0V to 5V waveform on J8 the TPS7H6101-SP will run as a buck converter of the duty cycle and frequency you select. The (...)
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UNKNOWN (NPR) 64 Ultra Librarian
TI's Standard Terms and Conditions for Evaluation Items apply.

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