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TPSI2140-Q1

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Automotive 1200-V 50-mA isolated switch with 2-mA avalanche rating

Product details

Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C T A
  • Integrated avalanche rated MOSFETs
    • Designed and qualified for reliability during overvoltage conditions, including system level dielectric withstand testing (Hi-Pot)
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The primary side of the device is powered by only 9 mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 5 V–20 V and the EN pin of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, The VDD and EN pins could be driven together directly from the system supply or from a GPIO output. All control configurations of the TPSI2140-Q1 do not require additional external components such as a resistor and/or low side switch that are typically required in photo relay solutions.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.

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Design & development

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Evaluation board

TPSI2140Q1EVM — TPSI2140-Q1 evaluation module for 1200-V 50-mA isolated switch with 2-mA avalanche rating

The TPSI2140Q1EVM evaluation module is a two-copper layer board containing multiple test points and jumpers in order to fully evaluate the functionality of the device.

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