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TPSI2140-Q1

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Automotive 1200-V, 50-mA, isolated switch with 2-mA avalanche rating

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Data sheet

TPSI2140-Q1

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Data sheet Order now

Product details

Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
Withstand isolation voltage (VISO) (Vrms) 3750 FET Internal Number of channels 1 Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 20 Imax (A) 0.05 Features 2-mA avalanche current, Capacitive isolation TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125 Turnon time (enable) (ns) 70000 Turnoff time (disable) (ns) 100000 OFF-state leakage current (µA) 3.5 Rating Automotive Isolation rating Basic CMTI (min) (kV/µs) 100 Working isolation voltage (VIOWM) (Vrms) 1500 Surge isolation voltage (VIOSM) (VPK) 5000 Transient isolation voltage (VIOTM) (VPK) 5300 Creepage (min) (mm) 8 Clearance (min) (mm) 8
SOIC (DWQ) 11 106.09 mm² 10.3 x 10.3
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C ambient operating temperature
  • Integrated avalanche rated MOSFETs
    • Designed and qualified to operate in avalanche mode during overvoltage conditions
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC (DWQ-11) package with wide pins for improved thermal capability
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program
  • Qualified for automotive applications
    • AEC-Q100 grade 1: –40 to 125°C ambient operating temperature
  • Integrated avalanche rated MOSFETs
    • Designed and qualified to operate in avalanche mode during overvoltage conditions
      • I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulses
    • 1200-V standoff voltage
    • R ON = 130-Ω (T J = 25°C)
    • T ON, T OFF < 700-µs
  • Low primary side supply current
    • 9-mA ON state current
    • 3.5-µA OFF state current
  • Functional Safety Capable
  • Robust isolation barrier:
    • > 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltage
    • Isolation rating, V ISO, up to 3750-V RMS / 5300-V DC
    • Peak surge, V IOSM, up to 5000-V
    • ± 100-V/ns typical CMTI
  • SOIC (DWQ-11) package with wide pins for improved thermal capability
    • Creepage and clearance ≥ 8-mm (primary-secondary)
    • Creepage and clearance ≥ 6-mm (across switch terminals)
  • Safety-related certifications
    • (Planned) DIN VDE V 0884-11:2017-01
    • (Planned) UL 1577 component recognition program

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The entire primary side of the device requires only 9 mA of input current, enabling the user to drive both the VDD and EN pins from a single microcontroller GPIO and eliminating the need for an external low side switch used in photo relay solutions. The user can also choose to connect the VDD pin to a system supply between 5 V–20 V and drive the EN pin from a GPIO. The EN pin is fail-safe preventing any possibility of back powering the VDD supply.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to survive system level High Potential (HiPot) screening and DC fast charger surge currents of up to 2 mA without requiring any external components.

The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.

The entire primary side of the device requires only 9 mA of input current, enabling the user to drive both the VDD and EN pins from a single microcontroller GPIO and eliminating the need for an external low side switch used in photo relay solutions. The user can also choose to connect the VDD pin to a system supply between 5 V–20 V and drive the EN pin from a GPIO. The EN pin is fail-safe preventing any possibility of back powering the VDD supply.

The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±1.2 kV from S1 to S2. The TPSI2140-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to survive system level High Potential (HiPot) screening and DC fast charger surge currents of up to 2 mA without requiring any external components.
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Type Title Date
* Data sheet TPSI2140-Q1 1200-V, 50-mA, Automotive Isolated Switch with 2-mA Avalanche Rating datasheet (Rev. A) PDF | HTML 21 Nov 2022
More literature When to use SSR or Isolated Gate Driver PDF | HTML 04 Aug 2022
Technical article How to design high-voltage systems with higher reliability while reducing solution size and cost 08 Jun 2022
Technical article How to achieve higher-reliability isolation and a smaller solution size with solid-state relays 09 May 2022
User guide TPSI2140-Q1 EVM User's Guide PDF | HTML 12 Apr 2022
Certificate TPSI2140Q1EVM EU RoHS Declaration of Conformity (DoC) (Rev. A) 05 Apr 2022

Design & development

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Evaluation board

TPSI2140Q1EVM — TPSI2140-Q1 evaluation module for 1200-V, 50-mA, isolated switch with 2-mA avalanche rating

The TPSI2140Q1EVM evaluation module is a two-copper layer board containing multiple test points and jumpers in order to fully evaluate the functionality of the device.

User guide: PDF | HTML
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Simulation tool

CMSO-3P-BCS — comemso battery cell simulator

The Battery Cell Simulator (BCS) is the core of any test Battery Management System (BMS). It allows the simulation of all required states and faults for the BMS on the cell level.
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PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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Reference designs

TIDA-010232 — AFE for insulation monitoring in high-voltage EV charging and solar energy reference design

This reference design features an electric bridge DC insulation monitoring (DC-IM) method which allows an accurate symmetrical and asymmetrical insulation leakage detection mechanism and an isolation resistance detection mechanism. We present a new generation of isolated amplifiers and switchers (...)
Design guide: PDF
Reference designs

TIDA-01513 — Automotive High-Voltage and Isolation Leakage Measurements Reference Design

The function of this reference design is to monitor the isolation resistance of a high-voltage bus to the chassis ground. Monitoring the isolation strength of coupling devices and components from high voltage to the chassis ground is a necessary feature in HEV’s and EV’s as battery (...)
Design guide: PDF
Schematic: PDF
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