Product details

Number of channels (#) 2 Power switch MOSFET, IGBT Peak output current (A) 1.5 Input VCC (Min) (V) 5 Input VCC (Max) (V) 40 Features Analog Shutdown with Optional Latch, Thermal Shutdown Operating temperature range (C) 0 to 70 Rise time (ns) 40 Fall time (ns) 40 Prop delay (ns) 100 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Military Driver configuration Dual
Number of channels (#) 2 Power switch MOSFET, IGBT Peak output current (A) 1.5 Input VCC (Min) (V) 5 Input VCC (Max) (V) 40 Features Analog Shutdown with Optional Latch, Thermal Shutdown Operating temperature range (C) 0 to 70 Rise time (ns) 40 Fall time (ns) 40 Prop delay (ns) 100 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Military Driver configuration Dual
CDIP (J) 16 135 mm² 19.65 x 6.92
  • Two independent Drivers
  • 1.5A Totem Pole Outputs
  • Inverting and Non-Inverting Inputs
  • 40 ns Rise and Fall into 1000 pF
  • High-Speed, Power MOSFET Compatible
  • Low Cross-Conduction Current Spike
  • Analog Shutdown with Optional Latch
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • 16-Pin Dual-In-Line Package
  • 20-Pin PLCC and CLCC Package
  • Two independent Drivers
  • 1.5A Totem Pole Outputs
  • Inverting and Non-Inverting Inputs
  • 40 ns Rise and Fall into 1000 pF
  • High-Speed, Power MOSFET Compatible
  • Low Cross-Conduction Current Spike
  • Analog Shutdown with Optional Latch
  • Low Quiescent Current
  • 5 V to 40 V Operation
  • Thermal Shutdown Protection
  • 16-Pin Dual-In-Line Package
  • 20-Pin PLCC and CLCC Package

The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain two independent channels, each of which can be activated by either a high or low input logic level signal. Each output can source or sink up to 1.5 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, it can be forced low in common through the action either of a digital high signal at the Shutdown terminal or a differential low-level analog signal. The Shutdown command from either source can either be latching or not, depending on the status of the Latch Disable pin.

Supply voltage for both VIN and VC can independently range from 5 V to 40 V.

These devices are available in two-watt plastic "bat-wing" DIP for operation over a 0°C to 70°C temperature range and, with reduced power, in a hermetically sealed cerdip for –55°C to +125°C operation. Also available in surface mount DW, Q, L packages.

The UC1707 family of power drivers is made with a high-speed Schottky process to interface between low-level control functions and high-power switching devices - particularly power MOSFETs. These devices contain two independent channels, each of which can be activated by either a high or low input logic level signal. Each output can source or sink up to 1.5 A as long as power dissipation limits are not exceeded.

Although each output can be activated independently with its own inputs, it can be forced low in common through the action either of a digital high signal at the Shutdown terminal or a differential low-level analog signal. The Shutdown command from either source can either be latching or not, depending on the status of the Latch Disable pin.

Supply voltage for both VIN and VC can independently range from 5 V to 40 V.

These devices are available in two-watt plastic "bat-wing" DIP for operation over a 0°C to 70°C temperature range and, with reduced power, in a hermetically sealed cerdip for –55°C to +125°C operation. Also available in surface mount DW, Q, L packages.

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Technical documentation

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Type Title Date
* Data sheet Dual Channel Power Driver datasheet (Rev. B) 16 Sep 2008
Technical article Managing power-supply noise with a 30-V gate driver 07 Dec 2021
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
Application note U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics 05 Sep 1999
Application note U-137 Practical Considerations in High Performance MOSFET, IGBT and MCT Gate 05 Sep 1999

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